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Making Tiny Chip Patterns Using Gas and Light

This patent describes an advanced machine that uses a special gas and patterned light, like a tiny stencil, to draw incredibly small features directly onto a silicon wafer for making computer chips.

Granted 2019ActiveExpires 2038Owned by Taiwan Semiconductor Manufacturing Co TSMCInvented by Kevin Huang, Jeng-Horng Chen, Kuo-Chang Kau + 1 more

Original patent title: “Lithography patterning with a gas phase resist

Plain-English explanation by SahiLast reviewed · July 23, 2026

This patent describes an advanced machine that uses a special gas and patterned light, like a tiny stencil, to draw incredibly small features directly onto a silicon wafer for making computer chips. Granted to Taiwan Semiconductor Manufacturing Co TSMC in 2019 with 23 claims, and it is expected to expire in 2038.

Coverage

What does this patent actually cover?

This patent describes an apparatus for creating patterns on semiconductor wafers using a gas-phase resist. Instead of coating a liquid resist, the machine flows an organic gas near the wafer's surface (ClaimclaimA numbered sentence at the end of a patent that legally defines what the inventor owns. The most important section.Read more → 1). A radiation source, often extreme ultraviolet (EUV) light (Claim 11), shines a patterned beam onto a special 'deposition enhancement layer' (DEL) on the wafer (Claim 1). Where the light hits, elements of the organic gas polymerize, meaning they stick together and form a solid resist pattern (Claim 1). The apparatus precisely controls the gas flow, turning it on while the light scans and shutting it off before the light reaches the edge of the wafer (Claim 1). For example, to create a circuit line, the EUV light would draw the line, and the organic gas would solidify only where the light hits, forming the resist pattern.

The gap

What does this patent NOT cover?

  • Does not cover traditional lithography methods that use liquid photoresists applied by spinning the wafer.
  • Does not cover patterning techniques that do not involve the polymerization of an organic gas by patterned radiation.
  • Does not cover systems where the organic gas flow is not precisely controlled to shut off before the radiation reaches the wafer's edge (ClaimclaimA numbered sentence at the end of a patent that legally defines what the inventor owns. The most important section.Read more → 1).
  • Does not cover apparatuses that do not include a deposition enhancement layer (DEL) on the substrate (ClaimclaimA numbered sentence at the end of a patent that legally defines what the inventor owns. The most important section.Read more → 1).
  • Does not cover patterning methods that do not use a radiation source to directly polymerize gas elements into a resist pattern.

These exclusions are unique to PatentBrief — derived from the actual claim language, not patent-office boilerplate.

Key facts

Patent numberUS 10514610
StatusActive
FieldSemiconductors & Chips
AssigneeTaiwan Semiconductor Manufacturing Co TSMC
InventorsKevin Huang, Jeng-Horng Chen, Kuo-Chang Kau and 1 other
Filed2018
Granted2019
Expires2038
Claims23
Times cited0
LitigationNone on record
Value · $37K$117KMinimal

What made this novel

The clever part is forming the resist pattern directly from a gas in a highly controlled manner, rather than applying a liquid. This allows for much finer patterns and avoids issues like resist collapse or defects that can occur with liquid resists, especially when using extreme ultraviolet light.

The Patent Drawing

Representative patent drawing for Lithography patterning with a gas phase resist (US 10514610)
Representative figure · US 10514610All figures on Google Patents →
Lithography patterning with a …(Primary claim)semiconductorsconsumer electronicsmaterialstelecommunications

Schematic visualization of the patent's claim structure. Hand-drawn diagrams in progress for each landmark patent.

Where you've seen this

Real-world examples

01

Advanced semiconductor manufacturing facilities (fabs)

02

EUV lithography machines for 3nm and 2nm process nodes

03

Next-generation memory chip production

04

High-performance processor manufacturing

Why it matters

The bigger picture

This technology is crucial for manufacturing the smallest, most advanced computer chips. As chips get smaller, traditional liquid resists struggle to create the necessary fine patterns. Gas-phase resists, especially with EUV light, offer a way to overcome these limitations, enabling the production of faster, more powerful processors and memory for all our electronic devices.

Filed

July 9, 2018

Granted

December 24, 2019

Market context

Who's building on this

Companies in this space

Taiwan Semiconductor Manufacturing Co (TSMC) is the assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more → of this patent and a global leader in advanced semiconductor manufacturing, particularly in EUV lithography. Other major chip manufacturers like Samsung and Intel, along with lithography equipment suppliers such as ASML, are actively developing and implementing similar or related technologies to push the boundaries of chip fabrication.

Market impact

This patent's technology contributes to the ongoing shift towards advanced lithography techniques like EUV, which are essential for producing the next generation of microchips. It helps overcome physical limitations of older methods, enabling smaller, more powerful, and energy-efficient processors. This directly impacts the entire electronics industry by making possible the high-performance devices that drive modern computing, AI, and mobile technology.

Claim 1 — Plain English

What this patent covers

This patent describes an apparatus for creating patterns on semiconductor wafers using a gas-phase resist. Instead of coating a liquid resist, the machine flows an organic gas near the wafer's surface (Claim 1). A radiation source, often extreme ultraviolet (EUV) light (Claim 11), shines a patterned beam onto a special 'deposition enhancement layer' (DEL) on the wafer (Claim 1). Where the light hits, elements of the organic gas polymerize, meaning they stick together and form a solid resist pattern (Claim 1). The apparatus precisely controls the gas flow, turning it on while the light scans and shutting it off before the light reaches the edge of the wafer (Claim 1). For example, to create a circuit line, the EUV light would draw the line, and the organic gas would solidify only where the light hits, forming the resist pattern.

The clever bit

The clever part is forming the resist pattern directly from a gas in a highly controlled manner, rather than applying a liquid. This allows for much finer patterns and avoids issues like resist collapse or defects that can occur with liquid resists, especially when using extreme ultraviolet light.

What it does not cover

  • Does not cover traditional lithography methods that use liquid photoresists applied by spinning the wafer.
  • Does not cover patterning techniques that do not involve the polymerization of an organic gas by patterned radiation.
  • Does not cover systems where the organic gas flow is not precisely controlled to shut off before the radiation reaches the wafer's edge (Claim 1).
  • Does not cover apparatuses that do not include a deposition enhancement layer (DEL) on the substrate (Claim 1).
  • Does not cover patterning methods that do not use a radiation source to directly polymerize gas elements into a resist pattern.

Patent timeline

Filing

Application submitted to the patent office

Publication

Application published, typically 18 months after filing

Grant

Patent officially issued

Expiration

Patent enters public domain

PatentBrief Score

Impact Score

Early stage

Citation count

0/40

No citations yet

Claim breadth

15/20

Broad claimsclaimsThe numbered statements at the end of a patent that legally define what the inventor owns.Read more →

Recency

10/20

Granted 5–10 years ago

Assignee scale

0/20

Independent or smaller assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more →

PatentBrief Impact Score — based on citation count, claim breadth, recency, and assignee scale. Not a legal assessment.

Heuristic Value Estimate

What this patent might be worth

Minimal

$37K$117K

Midpoint $73K · 11.9 yr remaining · industry ×1.5

Adjust inputs →

Heuristic only — blends forward/backward citation counts, claim scope, time remaining, litigation history, and CPC-derived industry baseline. Real valuations need a professional appraisal.

Claim text not yet imported for this patent

The original legal language

Original claims

23 claims as filed with the patent office.

Concepts involved

ClaimPrior artNon-obviousnessNoveltySpecificationAssigneePatent term

Citations

Patent lineage

Cites earlier patents

39

earlier patents this invention cites as foundations

View prior art →

Cite this patent

Huang, K., Chen, J., Kau, K., & Chang, S. (2019). Making Tiny Chip Patterns Using Gas and Light (U.S. Patent No. 10,514,610). U.S. Patent and Trademark Office. https://patentbrief.org/patent/us/10514610/lithography-patterning-with-a-gas-phase-resist

Auto-generated from the patent record. Double-check author order and the issue date against the official USPTO document before submitting.

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Common Questions

Frequently Asked Questions

What does Making Tiny Chip Patterns Using Gas and Light cover?

This patent describes an advanced machine that uses a special gas and patterned light, like a tiny stencil, to draw incredibly small features directly onto a silicon wafer for making computer chips.

Who owns patent US 10514610?

Taiwan Semiconductor Manufacturing Co TSMC owns this patent, granted in 2019.

When does this patent expire?

This patent is expected to expire on July 9, 2038, when the invention enters the public domain.

What problem does this patent solve?

This technology is crucial for manufacturing the smallest, most advanced computer chips. As chips get smaller, traditional liquid resists struggle to create the necessary fine patterns. Gas-phase resists, especially with EUV light, offer a way to overcome these limitations, enabling the production of faster, more powerful processors and memory for all our electronic devices.

What does this patent NOT cover?

Does not cover traditional lithography methods that use liquid photoresists applied by spinning the wafer.

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Last reviewed: July 23, 2026 · PatentBrief is not a law firm and this is not legal advice.