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The Invention of the Junction Transistor

William Shockley's 1951 patent for the junction transistor, the fundamental building block of all modern digital electronics.

Granted 1951ExpiredExpired 1968Owned by Bell Telephone Laboratories IncInvented by Shockley William

Original patent title: “Circuit element utilizing semiconductive material

Plain-English explanation by SahiLast reviewed · June 13, 2026

William Shockley's 1951 patent for the junction transistor, the fundamental building block of all modern digital electronics. Granted to Bell Telephone Laboratories Inc in 1951 with 145 forward citations, and it is now in the public domain.

Coverage

What does this patent actually cover?

This patent describes a three-layer semiconductor device, known as a junction transistor, which acts as an electronic switch or amplifier. By sandwiching a thin layer of one type of semiconductive material between two layers of the opposite type, the device controls the flow of electrical current. This allows a small input signal to regulate a much larger output current, effectively mimicking the function of bulky vacuum tubes in a tiny, solid-state package.

The gap

What does this patent NOT cover?

  • Does not cover the earlier point-contact transistor design developed by Bardeen and Brattain.
  • Does not cover field-effect transistors (FETs) that rely on a gate-controlled electric field rather than p-n junctions.
  • Does not cover integrated circuits or the process of etching multiple transistors onto a single silicon wafer.

These exclusions are unique to PatentBrief — derived from the actual claim language, not patent-office boilerplate.

Key facts

Patent numberUS 2569347
StatusExpired
FieldSemiconductors & Chips
AssigneeBell Telephone Laboratories Inc
InventorShockley William
Filed1948
Granted1951
Expires1968 (expired)
Times cited145
LitigationNone on record
Value · $50K$161KModest

What made this novel

The genius was in using the 'junction'—the interface between p-type and n-type semiconductor materials—to precisely control charge carrier injection, rather than relying on the unpredictable surface contact points of previous designs.

The Patent Drawing

Representative patent drawing for Circuit element utilizing semiconductive material (US 2569347)
Representative figure · US 2569347All figures on Google Patents →
Circuit element utilizing semi…(Primary claim)semiconductorstelecommunicationsconsumer electronics

Schematic visualization of the patent's claim structure. Hand-drawn diagrams in progress for each landmark patent.

Where you've seen this

Real-world examples

01

Early transistor radios

02

Mainframe computer processors

03

Modern silicon-based logic gates

Why it matters

The bigger picture

This patent is the cornerstone of the information age. It replaced fragile, power-hungry vacuum tubes with reliable, efficient semiconductor switches, enabling the miniaturization of everything from hearing aids to the supercomputers that power the modern internet.

Filed

June 26, 1948

Granted

September 25, 1951

Market context

Who's building on this

Companies in this space

Every major semiconductor company, including Intel, TSMC, and Samsung, builds upon the foundational physics of the junction transistor described here. While the original patent has long expired, the principles of junction-based current control remain the bedrock of CMOS technology.

Market impact

This patent triggered the transition from analog vacuum-tube electronics to the digital solid-state era. It enabled the creation of the semiconductor industry, directly leading to the development of the microprocessor and the exponential growth of computing power described by Moore's Law.

Claim 1 — Plain English

What this patent covers

This patent describes a three-layer semiconductor device, known as a junction transistor, which acts as an electronic switch or amplifier. By sandwiching a thin layer of one type of semiconductive material between two layers of the opposite type, the device controls the flow of electrical current. This allows a small input signal to regulate a much larger output current, effectively mimicking the function of bulky vacuum tubes in a tiny, solid-state package.

The clever bit

The genius was in using the 'junction'—the interface between p-type and n-type semiconductor materials—to precisely control charge carrier injection, rather than relying on the unpredictable surface contact points of previous designs.

What it does not cover

  • Does not cover the earlier point-contact transistor design developed by Bardeen and Brattain.
  • Does not cover field-effect transistors (FETs) that rely on a gate-controlled electric field rather than p-n junctions.
  • Does not cover integrated circuits or the process of etching multiple transistors onto a single silicon wafer.

Patent timeline

Filing

Application submitted to the patent office

Publication

Application published, typically 18 months after filing

Grant

Patent officially issued

Expiration

Patent enters public domain

This patent is in the public domain

See the Freedom to Build guide — what is free to use, what is not, and how to cite this patent.

View guide →

PatentBrief Score

Impact Score

Moderate

Citation count

40/40

Highly cited

Claim breadth

0/20

Narrow claimsclaimsThe numbered statements at the end of a patent that legally define what the inventor owns.Read more →

Recency

0/20

Older than 20 years

Assignee scale

0/20

Independent or smaller assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more →

PatentBrief Impact Score — based on citation count, claim breadth, recency, and assignee scale. Not a legal assessment.

Heuristic Value Estimate

What this patent might be worth

Modest

$50K$161K

Midpoint $101K · expired or expiring · industry ×1.4

Adjust inputs →

Heuristic only — blends forward/backward citation counts, claim scope, time remaining, litigation history, and CPC-derived industry baseline. Real valuations need a professional appraisal.

Claim text not yet imported for this patent

Claim text not yet imported for this patent.

Concepts involved

ClaimPrior artNon-obviousnessNoveltySpecificationAssigneePatent term

Citations

Patent lineage

Cites earlier patents

12

earlier patents this invention cites as foundations

View prior art →

Cited by later patents

145

later patents that build on this invention

View patents →

Cite this patent

William, S. (1951). The Invention of the Junction Transistor (U.S. Patent No. 2,569,347). U.S. Patent and Trademark Office. https://patentbrief.org/patent/us/2569347/junction-transistor

Auto-generated from the patent record. Double-check author order and the issue date against the official USPTO document before submitting.

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Common Questions

Frequently Asked Questions

What does The Invention of the Junction Transistor cover?

William Shockley's 1951 patent for the junction transistor, the fundamental building block of all modern digital electronics.

Who owns patent US 2569347?

Bell Telephone Laboratories Inc owns this patent, granted in 1951.

When does this patent expire?

This patent has expired and is now in the public domain — anyone can use the invention freely.

What is patent US 2569347 cited by?

This patent has been cited by 145 later patents that build on its ideas.

What problem does this patent solve?

This patent is the cornerstone of the information age. It replaced fragile, power-hungry vacuum tubes with reliable, efficient semiconductor switches, enabling the miniaturization of everything from hearing aids to the supercomputers that power the modern internet.

What does this patent NOT cover?

Does not cover the earlier point-contact transistor design developed by Bardeen and Brattain.

Same assignee

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Last reviewed: June 13, 2026 · PatentBrief is not a law firm and this is not legal advice.