How TSMC Makes Advanced Silicon-Based Light Sensors
A manufacturing process for high-performance light sensors that use alternating doped regions within a silicon-on-insulator structure to improve detection efficiency.
Original patent title: “Light detecting device, optical device and method of manufacturing the same”
A manufacturing process for high-performance light sensors that use alternating doped regions within a silicon-on-insulator structure to improve detection efficiency. Granted to Taiwan Semiconductor Manufacturing Co TSMC Ltd in 2025 with 23 claims.
Key facts
Coverage
What does this patent actually cover?
This patent describes a method for building a light-detecting device, likely for silicon photonics applications. It starts with an insulating layer and a silicon layer, then creates a specialized light-detecting layer that sits partly inside the silicon. Within this detecting layer, the inventors place alternating regions of different electrical types (N-type and P-type doping). A key feature is how these doped regions are shaped; they extend laterally beyond the main detecting area to create specific contact points. This structure helps manage how light is captured and how electrical signals are extracted from the device.
The gap
What does this patent NOT cover?
- Does not cover standard CMOS image sensors used in smartphone cameras.
- Does not cover light detectors that lack the specific alternating N-type and P-type doped region geometry.
- Does not cover devices built on bulk silicon substrates without the specified insulating layer.
- Does not cover light detection methods that rely solely on external photodiode attachments.
These exclusions are unique to PatentBrief — derived from the actual claim language, not patent-office boilerplate.
What made this novel
The invention uses a specific geometry where doped regions extend laterally out of the light-detecting layer into the surrounding silicon, allowing for optimized electrical contact without interfering with the light-absorption path.
Schematic visualization of the patent's claim structure. Hand-drawn diagrams in progress for each landmark patent.
Where you've seen this
Real-world examples
Silicon photonics transceivers
High-speed optical communication chips
On-chip light sensors for data center interconnects
Why it matters
The bigger picture
As data centers and telecommunications shift toward optical interconnects, the ability to integrate light detection directly onto silicon chips is essential. This patent provides a specific structural recipe for TSMC to manufacture these components at scale using existing semiconductor fabrication techniques.
Filed
May 20, 2022
Granted
May 20, 2025
Market context
Who's building on this
Companies in this space
TSMC is the primary assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more → and is actively integrating these photonics capabilities into their foundry offerings. Other major players like Intel and GlobalFoundries are also heavily invested in silicon photonics manufacturing.
Market impact
This patent supports the ongoing industry trend of 'silicon photonics,' which aims to replace copper wires with light for chip-to-chip communication. By standardizing these manufacturing steps, TSMC enables fabless companies to design optical components that can be mass-produced using conventional semiconductor equipment.
Claim 1 — Plain English
What this patent covers
This patent describes a method for building a light-detecting device, likely for silicon photonics applications. It starts with an insulating layer and a silicon layer, then creates a specialized light-detecting layer that sits partly inside the silicon. Within this detecting layer, the inventors place alternating regions of different electrical types (N-type and P-type doping). A key feature is how these doped regions are shaped; they extend laterally beyond the main detecting area to create specific contact points. This structure helps manage how light is captured and how electrical signals are extracted from the device.
The clever bit
The invention uses a specific geometry where doped regions extend laterally out of the light-detecting layer into the surrounding silicon, allowing for optimized electrical contact without interfering with the light-absorption path.
What it does not cover
- Does not cover standard CMOS image sensors used in smartphone cameras.
- Does not cover light detectors that lack the specific alternating N-type and P-type doped region geometry.
- Does not cover devices built on bulk silicon substrates without the specified insulating layer.
- Does not cover light detection methods that rely solely on external photodiode attachments.
Patent timeline
Application submitted to the patent office
Application published, typically 18 months after filing
Patent officially issued
PatentBrief Score
Impact Score
Early stage
Citation count
0/40
No citations yet
Claim breadth
15/20
Broad claimsclaimsThe numbered statements at the end of a patent that legally define what the inventor owns.Read more →
Recency
20/20
Granted within 5 years
Assignee scale
0/20
Independent or smaller assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more →
PatentBrief Impact Score — based on citation count, claim breadth, recency, and assignee scale. Not a legal assessment.
Heuristic Value Estimate
What this patent might be worth
$33K – $105K
Midpoint $66K · 15.9 yr remaining · industry ×1.4
Heuristic only — blends forward/backward citation counts, claim scope, time remaining, litigation history, and CPC-derived industry baseline. Real valuations need a professional appraisal.
The original legal language
Original claims
23 claims as filed with the patent office.
Concepts involved
Citations
Patent lineage
Cite this patent
Cho, L., Jou, C., & SONG, W. (2025). How TSMC Makes Advanced Silicon-Based Light Sensors (U.S. Patent No. 12,310,123). U.S. Patent and Trademark Office. https://patentbrief.org/patent/us/12310123/raptor-1
Auto-generated from the patent record. Double-check author order and the issue date against the official USPTO document before submitting.
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Common Questions
Frequently Asked Questions
What does How TSMC Makes Advanced Silicon-Based Light Sensors cover?
A manufacturing process for high-performance light sensors that use alternating doped regions within a silicon-on-insulator structure to improve detection efficiency.
Who owns patent US 12310123?
Taiwan Semiconductor Manufacturing Co TSMC Ltd owns this patent, granted in 2025.
When does this patent expire?
This patent is expected to expire on May 20, 2045, when the invention enters the public domain.
What problem does this patent solve?
As data centers and telecommunications shift toward optical interconnects, the ability to integrate light detection directly onto silicon chips is essential. This patent provides a specific structural recipe for TSMC to manufacture these components at scale using existing semiconductor fabrication techniques.
What does this patent NOT cover?
Does not cover standard CMOS image sensors used in smartphone cameras.
Patent monitoring