How Samsung Makes Better Transistor Gates Using Two-Layer Metal Stacks
A design for a transistor gate electrode that uses a two-layer metal structure to improve electrical performance and reliability in modern microchips.
Original patent title: “USRE49538E1 - Semiconductor device and method of fabricating the same”
A design for a transistor gate electrode that uses a two-layer metal structure to improve electrical performance and reliability in modern microchips. Granted to Samsung Electronics Co Ltd in 2023 with 29 claims.
Key facts
Coverage
What does this patent actually cover?
This patent describes a specific way to build the gate electrode of a transistor, which acts as the switch for electricity in a chip. It uses a two-part structure: a lower gate electrode that acts as a cradle, and an upper gate electrode made of a different, more conductive metal that sits inside it. The lower gate has sidewalls that get thinner toward the top, which helps the upper metal layer fit snugly. By using a lower-resistivity metal for the upper part, the design allows electricity to flow faster through the gate, which is critical for high-performance processors.
The gap
What does this patent NOT cover?
- Does not cover gate structures that use a single, uniform metal layer throughout.
- Does not cover transistors where the upper gate electrode is wider than the lower gate electrode.
- Does not cover non-semiconductor electronic switches or mechanical relays.
- Does not cover specific chemical compositions of the substrate itself.
These exclusions are unique to PatentBrief — derived from the actual claim language, not patent-office boilerplate.
What made this novel
The design uses a tapered 'cradle' shape for the lower gate electrode, which ensures the upper, highly conductive metal is perfectly contained and centered, preventing manufacturing defects that occur when filling narrow gaps.
Schematic visualization of the patent's claim structure. Hand-drawn diagrams in progress for each landmark patent.
Where you've seen this
Real-world examples
Advanced logic chips for smartphones
High-performance server processors
Samsung FinFET or GAA transistor architectures
Why it matters
The bigger picture
As transistors shrink, resistance in the gate becomes a bottleneck for speed and power efficiency. This design helps engineers manage the trade-off between the precise work function needed for the gate to switch properly and the low electrical resistance needed for the signal to travel quickly. It is representative of the complex material engineering required to keep Moore's Law moving forward in advanced nodes.
Filed
October 14, 2020
Granted
May 30, 2023
Market context
Who's building on this
Companies in this space
Samsung Electronics is the primary developer and assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more →. This technology is part of the broader ecosystem of advanced semiconductor manufacturing, where companies like TSMC and Intel also employ complex multi-layer metal gate stacks to optimize transistor performance.
Market impact
This patent supports the ongoing industry shift toward more sophisticated gate-all-around and FinFET architectures. By standardizing these multi-layer gate structures, manufacturers can achieve higher clock speeds and lower power consumption in mobile and data center chips, which are essential for modern computing.
Claim 1 — Plain English
What this patent covers
This patent describes a specific way to build the gate electrode of a transistor, which acts as the switch for electricity in a chip. It uses a two-part structure: a lower gate electrode that acts as a cradle, and an upper gate electrode made of a different, more conductive metal that sits inside it. The lower gate has sidewalls that get thinner toward the top, which helps the upper metal layer fit snugly. By using a lower-resistivity metal for the upper part, the design allows electricity to flow faster through the gate, which is critical for high-performance processors.
The clever bit
The design uses a tapered 'cradle' shape for the lower gate electrode, which ensures the upper, highly conductive metal is perfectly contained and centered, preventing manufacturing defects that occur when filling narrow gaps.
What it does not cover
- Does not cover gate structures that use a single, uniform metal layer throughout.
- Does not cover transistors where the upper gate electrode is wider than the lower gate electrode.
- Does not cover non-semiconductor electronic switches or mechanical relays.
- Does not cover specific chemical compositions of the substrate itself.
Patent timeline
Application submitted to the patent office
Application published, typically 18 months after filing
Patent officially issued
PatentBrief Score
Impact Score
Moderate
Citation count
0/40
No citations yet
Claim breadth
19/20
Very broad protection
Recency
20/20
Granted within 5 years
Assignee scale
20/20
Major company or institution
PatentBrief Impact Score — based on citation count, claim breadth, recency, and assignee scale. Not a legal assessment.
Heuristic Value Estimate
What this patent might be worth
$41K – $131K
Midpoint $82K · 14.3 yr remaining · industry ×1.4
Heuristic only — blends forward/backward citation counts, claim scope, time remaining, litigation history, and CPC-derived industry baseline. Real valuations need a professional appraisal.
The original legal language
Original claims
29 claims as filed with the patent office.
Concepts involved
Citations
Patent lineage
Cite this patent
Lee, H., NA, H., Shin, Y., HONG, H., Hong, S., Hyun, S., & PARK, H. (2023). How Samsung Makes Better Transistor Gates Using Two-Layer Metal Stacks (U.S. Patent No. RE49,538). U.S. Patent and Trademark Office. https://patentbrief.org/patent/us/RE49538/instant-pot-multi-cooker
Auto-generated from the patent record. Double-check author order and the issue date against the official USPTO document before submitting.
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Common Questions
Frequently Asked Questions
What does How Samsung Makes Better Transistor Gates Using Two-Layer Metal Stacks cover?
A design for a transistor gate electrode that uses a two-layer metal structure to improve electrical performance and reliability in modern microchips.
Who owns patent US RE49538?
Samsung Electronics Co Ltd owns this patent, granted in 2023.
When does this patent expire?
This patent is expected to expire on May 30, 2043, when the invention enters the public domain.
What problem does this patent solve?
As transistors shrink, resistance in the gate becomes a bottleneck for speed and power efficiency. This design helps engineers manage the trade-off between the precise work function needed for the gate to switch properly and the low electrical resistance needed for the signal to travel quickly. It is representative of the complex material engineering required to keep Moore's Law moving forward in advanced nodes.
What does this patent NOT cover?
Does not cover gate structures that use a single, uniform metal layer throughout.
Same assignee
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