How a Special Transistor Reduces Power Leaks in Circuits
This patent describes a logic circuit that uses a unique transistor made with an oxide semiconductor to drastically cut down on wasted electricity, preventing errors in electronic devices.
Original patent title: “Logic circuit and semiconductor device”
This patent describes a logic circuit that uses a unique transistor made with an oxide semiconductor to drastically cut down on wasted electricity, preventing errors in electronic devices. Granted in 2026.
Coverage
What does this patent actually cover?
This patent describes a logic circuit designed to prevent malfunctions by significantly reducing electrical leakage. It achieves this using a special transistor that incorporates an 'oxide semiconductor layer', which acts as the 'channel formation layer' where electricity flows. This specific transistor is engineered to have an 'off current'—the tiny amount of electricity that still flows when the transistor is supposed to be completely off—of 1×10 −13 A or less per micrometer of its width. The circuit takes in a first signal, a second signal, and a third signal (a clock signal) as inputs, and then outputs a fourth and a fifth signal whose voltage states are determined by these inputs, much like how a simple 'AND' gate might process inputs to produce an output.
The gap
What does this patent NOT cover?
- Does not cover logic circuits that use traditional silicon-based transistors for their channel formation layer.
- Does not cover transistors where the 'off current' is higher than 1×10 −13 A per micrometer of channel width.
- Does not cover logic circuits that do not employ an oxide semiconductor layer in their transistors.
- Does not cover logic circuits that do not process at least three input signals to produce two output signals.
These exclusions are unique to PatentBrief — derived from the actual claim language, not patent-office boilerplate.
Key facts
What made this novel
The clever part is specifying a transistor with an 'oxide semiconductor layer' that achieves an extremely low 'off current' of 1×10 −13 A or less. This level of leakage reduction is critical for preventing circuit malfunctions and improving energy efficiency in advanced logic circuits.
Schematic visualization of the patent's claim structure. Hand-drawn diagrams in progress for each landmark patent.
Where you've seen this
Real-world examples
Energy-efficient microprocessors
Low-power memory chips
Battery-powered IoT devices
High-density integrated circuits
Why it matters
The bigger picture
Reducing leakage current in transistors is vital for modern electronics, as it directly impacts power consumption and the stability of complex circuits. As devices become smaller and more integrated, even tiny leakages can lead to significant power drain and operational errors. This technology could enable more energy-efficient processors and memory, extending battery life in portable devices and reducing heat generation in data centers. It aims to address a fundamental challenge in semiconductor design.
Filed
January 17, 2025
Granted
September 15, 2026
Market context
Who's building on this
Companies in this space
Many major semiconductor manufacturers and research institutions are actively pursuing technologies to reduce leakage current and improve power efficiency in integrated circuits. Companies like Intel, Samsung, TSMC, and IBM continuously invest in advanced transistor materials and architectures, including various types of oxide semiconductors, to push the boundaries of performance and energy efficiency in their processors and memory solutions.
Market impact
If successfully implemented and widely adopted, technologies like this could significantly impact the semiconductor market by enabling a new generation of ultra-low-power devices. This could lead to longer battery life for mobile electronics, reduced energy consumption in data centers, and the proliferation of highly efficient Internet of Things (IoT) devices. It could also drive further innovation in advanced material science for transistor fabrication.
Claim 1 — Plain English
What this patent covers
This patent describes a logic circuit designed to prevent malfunctions by significantly reducing electrical leakage. It achieves this using a special transistor that incorporates an 'oxide semiconductor layer', which acts as the 'channel formation layer' where electricity flows. This specific transistor is engineered to have an 'off current'—the tiny amount of electricity that still flows when the transistor is supposed to be completely off—of 1×10 −13 A or less per micrometer of its width. The circuit takes in a first signal, a second signal, and a third signal (a clock signal) as inputs, and then outputs a fourth and a fifth signal whose voltage states are determined by these inputs, much like how a simple 'AND' gate might process inputs to produce an output.
The clever bit
The clever part is specifying a transistor with an 'oxide semiconductor layer' that achieves an extremely low 'off current' of 1×10 −13 A or less. This level of leakage reduction is critical for preventing circuit malfunctions and improving energy efficiency in advanced logic circuits.
What it does not cover
- Does not cover logic circuits that use traditional silicon-based transistors for their channel formation layer.
- Does not cover transistors where the 'off current' is higher than 1×10 −13 A per micrometer of channel width.
- Does not cover logic circuits that do not employ an oxide semiconductor layer in their transistors.
- Does not cover logic circuits that do not process at least three input signals to produce two output signals.
Patent timeline
Application submitted to the patent office
Patent officially issued
PatentBrief Score
Impact Score
Early stage
Citation count
0/40
No citations yet
Claim breadth
0/20
Narrow claimsclaimsThe numbered statements at the end of a patent that legally define what the inventor owns.Read more →
Recency
20/20
Granted within 5 years
Assignee scale
0/20
Independent or smaller assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more →
PatentBrief Impact Score — based on citation count, claim breadth, recency, and assignee scale. Not a legal assessment.
Heuristic Value Estimate
What this patent might be worth
$18K – $58K
Midpoint $36K · 18.3 yr remaining · industry ×1.5
Heuristic only — blends forward/backward citation counts, claim scope, time remaining, litigation history, and CPC-derived industry baseline. Real valuations need a professional appraisal.
Claim text not yet imported for this patent
Concepts involved
Cite this patent
(2026). How a Special Transistor Reduces Power Leaks in Circuits (U.S. Patent No. 12,740,152). U.S. Patent and Trademark Office. https://patentbrief.org/patent/us/12740152/logic-circuit-and-semiconductor-device
Auto-generated from the patent record. Double-check author order and the issue date against the official USPTO document before submitting.
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Common Questions
Frequently Asked Questions
What does How a Special Transistor Reduces Power Leaks in Circuits cover?
This patent describes a logic circuit that uses a unique transistor made with an oxide semiconductor to drastically cut down on wasted electricity, preventing errors in electronic devices.
When does this patent expire?
This patent is expected to expire on September 15, 2046, when the invention enters the public domain.
What problem does this patent solve?
Reducing leakage current in transistors is vital for modern electronics, as it directly impacts power consumption and the stability of complex circuits. As devices become smaller and more integrated, even tiny leakages can lead to significant power drain and operational errors. This technology could enable more energy-efficient processors and memory, extending battery life in portable devices and reducing heat generation in data centers. It aims to address a fundamental challenge in semiconductor design.
What does this patent NOT cover?
Does not cover logic circuits that use traditional silicon-based transistors for their channel formation layer.
Patent monitoring