Making Tiny Chip Patterns with Special Metal-Filled Ink
This patent describes a new light-sensitive material, called a resist, that uses special multi-metal complexes to create incredibly small patterns on computer chips using extreme ultraviolet light.
Original patent title: “Material composition and methods thereof”
This patent describes a new light-sensitive material, called a resist, that uses special multi-metal complexes to create incredibly small patterns on computer chips using extreme ultraviolet light. Granted to Taiwan Semiconductor Manufacturing Co TSMC in 2020 with 22 claims, and it is expected to expire in 2037.
Coverage
What does this patent actually cover?
The patent outlines a method for creating microscopic patterns on a substrate, which is the base material for computer chips. First, a resist layer is formed over the substrate (ClaimclaimA numbered sentence at the end of a patent that legally defines what the inventor owns. The most important section.Read more → 1). This resist layer is unique because it contains 'metal-containing nanoparticles' that are specifically 'multi-metal complexes.' These complexes have an 'extreme ultraviolet (EUV) absorption element' (like antimony, Claim 5) and a 'bridging element' (like ruthenium, Claim 5) that connects different metal atoms. When EUV light hits the resist, a chemical change occurs: a 'first ligand' (a molecule attached to the metal complex) that couldn't connect with other complexes is replaced by a 'second ligand' that *can* participate in a 'cross-linking reaction' (Claim 1). This cross-linking process makes the exposed areas of the resist harder. Finally, a development process washes away the unexposed, softer parts, leaving behind a precise, patterned resist layer (Claim 1). For example, this process could be used to define the incredibly fine circuit lines for the transistors in a smartphone processor.
The gap
What does this patent NOT cover?
- Resist materials that do not contain multi-metal complexes, as the claimsclaimsThe numbered statements at the end of a patent that legally define what the inventor owns.Read more → specifically require a 'multi-metal complex' (ClaimclaimA numbered sentence at the end of a patent that legally defines what the inventor owns. The most important section.Read more → 1).
- Methods that use light sources other than extreme ultraviolet (EUV) for exposure, as the resist includes an 'EUV absorption element' (ClaimclaimA numbered sentence at the end of a patent that legally defines what the inventor owns. The most important section.Read more → 1).
- Resist materials where the metal atoms within the complex are not separated by at least one ligand (ClaimclaimA numbered sentence at the end of a patent that legally defines what the inventor owns. The most important section.Read more → 1 specifies 'each metal atom... separated... by at least one ligand').
- Processes where the exposure does not cause a ligand replacement that enables cross-linking (ClaimclaimA numbered sentence at the end of a patent that legally defines what the inventor owns. The most important section.Read more → 1 details 'first ligand... replaced by a second ligand... configured to participate in the cross-linking reaction').
- Resist materials that are chemically amplified resists (CARs), as the patent specifically mentions a 'non-chemically amplified resist (non-CAR) layer' in some embodiments (ClaimclaimA numbered sentence at the end of a patent that legally defines what the inventor owns. The most important section.Read more → 12).
These exclusions are unique to PatentBrief — derived from the actual claim language, not patent-office boilerplate.
Key facts
What made this novel
The noveltynoveltyThe requirement that an invention be different from anything publicly known before its priority date.Read more → lies in using a specific multi-metal complex within the resist. This complex has distinct elements for absorbing EUV light and for bridging, along with a clever mechanism where EUV exposure triggers a ligand swap, directly enabling cross-linking. This allows for very precise patterning without needing additional chemical amplification.
The Patent Drawing
Schematic visualization of the patent's claim structure. Hand-drawn diagrams in progress for each landmark patent.
Where you've seen this
Real-world examples
Manufacturing of advanced logic chips (CPUs, GPUs)
Production of high-density memory chips (DRAM, NAND)
Fabrication of components for 5G telecommunications
Next-generation smartphone processors
High-performance computing components
Why it matters
The bigger picture
This patent is crucial for the ongoing advancement of semiconductor manufacturing. Extreme Ultraviolet (EUV) lithography is the leading technology for creating the smallest features on advanced microchips, enabling more powerful and energy-efficient devices. Developing better resist materials, like the one described, is essential for pushing the limits of EUV technology, allowing chipmakers to continue shrinking transistors and improving performance. Without such innovations in materials, the progress of Moore's Law, which predicts the doubling of transistors on a chip every two years, would slow down significantly.
Filed
January 6, 2017
Granted
November 3, 2020
Market context
Who's building on this
Companies in this space
Taiwan Semiconductor Manufacturing Co (TSMC), the assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more →, is a global leader in advanced semiconductor manufacturing and continues to invest heavily in EUV lithography. Other major chip manufacturers like Intel and Samsung Foundry, along with lithography equipment maker ASML, are also actively developing and implementing advanced resist materials and processes to push the boundaries of chip fabrication.
Market impact
This type of materials innovation is fundamental to enabling the production of chips at the most advanced technology nodes (e.g., 5nm, 3nm). It directly impacts the ability to create smaller, more powerful, and more energy-efficient microprocessors and memory. By providing a more effective resist for EUV lithography, such patents help reduce manufacturing costs, improve yield, and ultimately allow for the continued miniaturization that drives the entire consumer electronics and computing industries.
Claim 1 — Plain English
What this patent covers
The patent outlines a method for creating microscopic patterns on a substrate, which is the base material for computer chips. First, a resist layer is formed over the substrate (Claim 1). This resist layer is unique because it contains 'metal-containing nanoparticles' that are specifically 'multi-metal complexes.' These complexes have an 'extreme ultraviolet (EUV) absorption element' (like antimony, Claim 5) and a 'bridging element' (like ruthenium, Claim 5) that connects different metal atoms. When EUV light hits the resist, a chemical change occurs: a 'first ligand' (a molecule attached to the metal complex) that couldn't connect with other complexes is replaced by a 'second ligand' that *can* participate in a 'cross-linking reaction' (Claim 1). This cross-linking process makes the exposed areas of the resist harder. Finally, a development process washes away the unexposed, softer parts, leaving behind a precise, patterned resist layer (Claim 1). For example, this process could be used to define the incredibly fine circuit lines for the transistors in a smartphone processor.
The clever bit
The novelty lies in using a specific multi-metal complex within the resist. This complex has distinct elements for absorbing EUV light and for bridging, along with a clever mechanism where EUV exposure triggers a ligand swap, directly enabling cross-linking. This allows for very precise patterning without needing additional chemical amplification.
What it does not cover
- Resist materials that do not contain multi-metal complexes, as the claims specifically require a 'multi-metal complex' (Claim 1).
- Methods that use light sources other than extreme ultraviolet (EUV) for exposure, as the resist includes an 'EUV absorption element' (Claim 1).
- Resist materials where the metal atoms within the complex are not separated by at least one ligand (Claim 1 specifies 'each metal atom... separated... by at least one ligand').
- Processes where the exposure does not cause a ligand replacement that enables cross-linking (Claim 1 details 'first ligand... replaced by a second ligand... configured to participate in the cross-linking reaction').
- Resist materials that are chemically amplified resists (CARs), as the patent specifically mentions a 'non-chemically amplified resist (non-CAR) layer' in some embodiments (Claim 12).
Patent timeline
Application submitted to the patent office
Application published, typically 18 months after filing
Patent officially issued
Patent enters public domain
PatentBrief Score
Impact Score
Early stage
Citation count
0/40
No citations yet
Claim breadth
15/20
Broad claimsclaimsThe numbered statements at the end of a patent that legally define what the inventor owns.Read more →
Recency
10/20
Granted 5–10 years ago
Assignee scale
0/20
Independent or smaller assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more →
PatentBrief Impact Score — based on citation count, claim breadth, recency, and assignee scale. Not a legal assessment.
Heuristic Value Estimate
What this patent might be worth
$37K – $117K
Midpoint $73K · 10.2 yr remaining · industry ×1.5
Heuristic only — blends forward/backward citation counts, claim scope, time remaining, litigation history, and CPC-derived industry baseline. Real valuations need a professional appraisal.
Claim text not yet imported for this patent
The original legal language
Original claims
22 claims as filed with the patent office.
Concepts involved
Citations
Patent lineage
Cite this patent
Lin, Y., CHIA, P., Chen, J., Chen, C., Chen, C., Kau, K., & Chang, S. (2020). Making Tiny Chip Patterns with Special Metal-Filled Ink (U.S. Patent No. 10,825,684). U.S. Patent and Trademark Office. https://patentbrief.org/patent/us/10825684/material-composition-and-methods-thereof
Auto-generated from the patent record. Double-check author order and the issue date against the official USPTO document before submitting.
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Common Questions
Frequently Asked Questions
What does Making Tiny Chip Patterns with Special Metal-Filled Ink cover?
This patent describes a new light-sensitive material, called a resist, that uses special multi-metal complexes to create incredibly small patterns on computer chips using extreme ultraviolet light.
Who owns patent US 10825684?
Taiwan Semiconductor Manufacturing Co TSMC owns this patent, granted in 2020.
When does this patent expire?
This patent is expected to expire on January 6, 2037, when the invention enters the public domain.
What problem does this patent solve?
This patent is crucial for the ongoing advancement of semiconductor manufacturing. Extreme Ultraviolet (EUV) lithography is the leading technology for creating the smallest features on advanced microchips, enabling more powerful and energy-efficient devices. Developing better resist materials, like the one described, is essential for pushing the limits of EUV technology, allowing chipmakers to continue shrinking transistors and improving performance. Without such innovations in materials, the progress of Moore's Law, which predicts the doubling of transistors on a chip every two years, would…
What does this patent NOT cover?
Resist materials that do not contain multi-metal complexes, as the claims specifically require a 'multi-metal complex' (Claim 1).
Same assignee
More from Taiwan Semiconductor Manufacturing Co TSMC
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