Making Better Carbon Hardmasks for Chip Manufacturing
This patent describes a method for creating special carbon layers, called hardmasks, used in making computer chips, by using a unique plasma process that makes them stronger and easier to remove.
Original patent title: “High selectivity, low stress, and low hydrogen carbon hardmasks in low-pressure conditions with wide gap electrode spacing”
This patent describes a method for creating special carbon layers, called hardmasks, used in making computer chips, by using a unique plasma process that makes them stronger and easier to remove. Granted in 2026.
Coverage
What does this patent actually cover?
This patent describes methods and equipment for depositing an ashable hard mask (AHM) onto a substrate, typically a silicon wafer. The core mechanism involves using a plasma process with a specific setup: a "wide gap electrode spacing" in "low-pressure conditions." This combination helps to control unwanted plasma formations, known as "parasitic plasmas," which can otherwise degrade the quality of the deposited layer. By controlling these plasmas, the method enables the creation of AHMs that have "high selectivity" (meaning they protect underlying materials very well during etching), "low stress" (less prone to cracking or warping), and "low hydrogen" content (making them easier to remove later). For example, this process could be used to deposit a carbon hardmask onto a silicon wafer before etching tiny, intricate patterns for a new generation of microprocessors.
The gap
What does this patent NOT cover?
- Does not cover hardmasks made from materials other than carbon, such as silicon dioxide or silicon nitride.
- Does not cover deposition processes that use narrow electrode spacing or high-pressure conditions.
- Does not cover hardmasks that are not 'ashable' or easily removed after their purpose is served.
- Does not cover the actual etching of features into the underlying substrate, only the deposition of the protective mask.
- Does not cover methods for depositing hardmasks without controlling parasitic plasmas.
These exclusions are unique to PatentBrief — derived from the actual claim language, not patent-office boilerplate.
Key facts
What made this novel
The clever part is identifying that combining a 'wide gap electrode spacing' with 'low-pressure conditions' effectively controls 'parasitic plasmas' during deposition. This specific combination allows for the creation of superior carbon hardmasks with properties like high selectivity and low stress, which are crucial for advanced chip fabrication.
Schematic visualization of the patent's claim structure. Hand-drawn diagrams in progress for each landmark patent.
Where you've seen this
Real-world examples
Semiconductor manufacturing
Microprocessor fabrication
Memory chip production (e.g., NAND flash, DRAM)
Advanced logic chip manufacturing
Why it matters
The bigger picture
Hardmasks are essential tools in the intricate process of manufacturing computer chips. Creating hardmasks with high selectivity, low stress, and low hydrogen content allows chipmakers to etch finer features more reliably and with fewer defects. This technology directly supports the continuous miniaturization and performance improvements seen in modern semiconductors, which power everything from smartphones to supercomputers.
Filed
December 13, 2021
Granted
September 15, 2026
Market context
Who's building on this
Companies in this space
While the original assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more → is unknown, the technology described is fundamental to semiconductor manufacturing equipment. Major players like Applied Materials, Lam Research, and Tokyo Electron are continuously developing and refining plasma deposition and etch systems that incorporate such innovations. These companies are at the forefront of creating the tools necessary for advanced hardmask processes used in chip fabrication.
Market impact
Improvements in hardmask technology directly enable the creation of smaller, more powerful, and more energy-efficient microchips. This patent's focus on high selectivity, low stress, and low hydrogen hardmasks helps overcome manufacturing challenges at advanced process nodes, allowing for continued miniaturization and performance gains in the semiconductor industry. It contributes to reducing defects and improving yield in chip fabrication, which is critical for profitability.
Claim 1 — Plain English
What this patent covers
This patent describes methods and equipment for depositing an ashable hard mask (AHM) onto a substrate, typically a silicon wafer. The core mechanism involves using a plasma process with a specific setup: a "wide gap electrode spacing" in "low-pressure conditions." This combination helps to control unwanted plasma formations, known as "parasitic plasmas," which can otherwise degrade the quality of the deposited layer. By controlling these plasmas, the method enables the creation of AHMs that have "high selectivity" (meaning they protect underlying materials very well during etching), "low stress" (less prone to cracking or warping), and "low hydrogen" content (making them easier to remove later). For example, this process could be used to deposit a carbon hardmask onto a silicon wafer before etching tiny, intricate patterns for a new generation of microprocessors.
The clever bit
The clever part is identifying that combining a 'wide gap electrode spacing' with 'low-pressure conditions' effectively controls 'parasitic plasmas' during deposition. This specific combination allows for the creation of superior carbon hardmasks with properties like high selectivity and low stress, which are crucial for advanced chip fabrication.
What it does not cover
- Does not cover hardmasks made from materials other than carbon, such as silicon dioxide or silicon nitride.
- Does not cover deposition processes that use narrow electrode spacing or high-pressure conditions.
- Does not cover hardmasks that are not 'ashable' or easily removed after their purpose is served.
- Does not cover the actual etching of features into the underlying substrate, only the deposition of the protective mask.
- Does not cover methods for depositing hardmasks without controlling parasitic plasmas.
Patent timeline
Application submitted to the patent office
Patent officially issued
PatentBrief Score
Impact Score
Early stage
Citation count
0/40
No citations yet
Claim breadth
0/20
Narrow claimsclaimsThe numbered statements at the end of a patent that legally define what the inventor owns.Read more →
Recency
20/20
Granted within 5 years
Assignee scale
0/20
Independent or smaller assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more →
PatentBrief Impact Score — based on citation count, claim breadth, recency, and assignee scale. Not a legal assessment.
Heuristic Value Estimate
What this patent might be worth
$29K – $92K
Midpoint $58K · 15.2 yr remaining · industry ×2.4
Heuristic only — blends forward/backward citation counts, claim scope, time remaining, litigation history, and CPC-derived industry baseline. Real valuations need a professional appraisal.
Claim text not yet imported for this patent
Concepts involved
Cite this patent
(2026). Making Better Carbon Hardmasks for Chip Manufacturing (U.S. Patent No. 12,735,785). U.S. Patent and Trademark Office. https://patentbrief.org/patent/us/12735785/high-selectivity-low-stress-and-low-hydrogen-carbon-hardmasks-in-low-pressure
Auto-generated from the patent record. Double-check author order and the issue date against the official USPTO document before submitting.
Embed
Add this patent to your site
Drop this plain-English patent card into any blog post or article — free, no signup. It always links back to the full breakdown here.
<div data-patentlens-widget data-patent-number="US12735785"></div> <script src="https://patentbrief.org/embed.js" async></script>
Stay in the loop
Get a weekly digest of new patents.
One email per week. No spam. Unsubscribe anytime.
Keep exploring
Related patents you should know
US 4683195 · 1987
How to Make Billions of Copies of a DNA Segment
This patent describes the Polymerase Chain Reaction (PCR), a method to rapidly create many copies of a specific piece of DNA or RNA, enabling its detection and analysis.
Cetus Corp
US 8697359 · 2014
How to Edit Genes in Human Cells Using an Engineered CRISPR System
This patent describes an engineered CRISPR-Cas9 system for precisely cutting DNA in eukaryotic cells to change how genes work, opening the door for gene editing in complex organisms.
Massachusetts Institute of Technology
US 7657849 · 2010
How the iPhone's Slide-to-Unlock Gesture Works
Apple's 2010 patent describes unlocking a device by dragging a specific graphical image across the touchscreen along a predefined path, a gesture that became iconic with the original iPhone.
Apple Inc
US 4733665 · 1988
How Doctors Implant a Permanent Stent Using a Balloon
This patent describes the method for placing a permanent, expandable wire mesh tube inside a blood vessel or other body tube using a balloon-tipped catheter to widen it and keep it open.
Expandable Grafts Partnership
US 4965188 · 1990
How to Make Many Copies of a DNA Piece with Heat
This patent describes the Polymerase Chain Reaction (PCR) method, a technique to make millions of copies of a specific DNA segment using a heat-resistant enzyme and repeated temperature changes.
Cetus Corp
US 4235871 · 1980
How to Encapsulate Active Materials in Lipid Bubbles Efficiently
This patent describes a method for trapping biologically active substances inside tiny, multi-layered fat bubbles called liposomes, using a specific water-in-oil emulsion and gel-forming process to improve how much material gets captured.
Individual
More to explore
More in Semiconductors & Chips
US 5563422 · 1996 · Nichia Chemical Industries Ltd
How Nichia Created the First Practical Blue LED Electrodes
US 10373050 · 2019 · Qualcomm Inc
How to Make AI Run Faster on Smaller Computer Chips
US 2981877 · 1961 · Fairchild Semiconductor Corp
How Robert Noyce Invented the Modern Integrated Circuit
US 2569347 · 1951 · Bell Telephone Laboratories Inc
The Invention of the Junction Transistor
New to patents?
Common Questions
Frequently Asked Questions
What does Making Better Carbon Hardmasks for Chip Manufacturing cover?
This patent describes a method for creating special carbon layers, called hardmasks, used in making computer chips, by using a unique plasma process that makes them stronger and easier to remove.
When does this patent expire?
This patent is expected to expire on September 15, 2046, when the invention enters the public domain.
What problem does this patent solve?
Hardmasks are essential tools in the intricate process of manufacturing computer chips. Creating hardmasks with high selectivity, low stress, and low hydrogen content allows chipmakers to etch finer features more reliably and with fewer defects. This technology directly supports the continuous miniaturization and performance improvements seen in modern semiconductors, which power everything from smartphones to supercomputers.
What does this patent NOT cover?
Does not cover hardmasks made from materials other than carbon, such as silicon dioxide or silicon nitride.
Patent monitoring