How NAND Flash Memory Adjusts to Cold Temperatures
This patent describes a method for NAND flash memory systems to prevent errors by automatically adjusting their operating conditions, like data speed or voltage, when the temperature drops too low.
Original patent title: “Storage devices, memory systems and operating methods to suppress operating errors due to variations in environmental conditions”
This patent describes a method for NAND flash memory systems to prevent errors by automatically adjusting their operating conditions, like data speed or voltage, when the temperature drops too low. Granted to Samsung Electronics Co in 2018 with 20 claims and 5 forward citations, and it is expected to expire in 2036.
Coverage
What does this patent actually cover?
This patent describes a method for a NAND flash memory system to adapt its operations when it gets cold. Specifically, if a temperature sensing device detects the memory system's temperature drops below a first threshold, a clock control unit adjusts an operating condition (ClaimclaimA numbered sentence at the end of a patent that legally defines what the inventor owns. The most important section.Read more → 1). For example, it decreases the data input/output (I/O) speed from a first speed to a second, slower speed (Claim 1). If the temperature drops even further below a second, colder threshold, the data I/O speed can be decreased again (Claim 2). The system can also increase the read voltage level (Claim 4) or the drive strength (Claim 7) when temperatures fall, to ensure data is read correctly and reliably. Conversely, if the temperature rises back above a threshold, the system can revert these adjustments, increasing the data I/O speed or decreasing the read voltage/drive strength (Claim 3, 6, 9).
The gap
What does this patent NOT cover?
- Does not cover memory systems that are not NAND flash memory.
- Does not cover adjusting memory operations when temperature *increases*, unless it's reverting a previous adjustment made for cold conditions.
- Does not cover adjusting operating conditions other than data I/O speed, read voltage level, or drive strength.
- Does not cover memory systems that *increase* data I/O speed when the temperature *decreases*.
- Does not cover systems that only adjust for *high* temperatures, such as reducing performance to prevent overheating.
These exclusions are unique to PatentBrief — derived from the actual claim language, not patent-office boilerplate.
Key facts
What made this novel
The clever bit is recognizing that *decreasing* temperatures also cause specific types of memory errors and proactively adjusting operating parameters like data speed, read voltage, or drive strength to compensate, rather than just focusing on overheating issues.
The Patent Drawing
Schematic visualization of the patent's claim structure. Hand-drawn diagrams in progress for each landmark patent.
Where you've seen this
Real-world examples
Solid-state drives (SSDs) in laptops and servers
Smartphones and tablets operating in cold climates
Automotive infotainment and control systems
Industrial IoT devices deployed outdoors or in unheated facilities
Embedded flash memory in drones or outdoor cameras
Why it matters
The bigger picture
NAND flash memory, used in many devices, is sensitive to temperature changes. Operating in very cold conditions can lead to data errors or system instability. This patent provides a mechanism to maintain data integrity and system reliability by dynamically adjusting how the memory operates, making flash storage more robust for use in a wider range of environments, from consumer gadgets to industrial equipment.
Filed
February 5, 2016
Granted
July 10, 2018
Market context
Who's building on this
Companies in this space
Samsung Electronics, the assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more →, is a major player in NAND flash memory manufacturing and continues to develop technologies for robust memory operation. Other large memory manufacturers like SK Hynix, Micron Technology, and Kioxia also invest heavily in improving the reliability and performance of flash memory across various environmental conditions.
Market impact
This patent contributes to the ongoing effort to improve the reliability of NAND flash memory, which is critical for its widespread adoption. By enabling flash memory to operate more stably in cold environments, it expands the potential applications for SSDs and embedded flash, particularly in automotive, industrial, and outdoor consumer electronics sectors, where temperature extremes are common.
Claim 1 — Plain English
What this patent covers
This patent describes a method for a NAND flash memory system to adapt its operations when it gets cold. Specifically, if a temperature sensing device detects the memory system's temperature drops below a first threshold, a clock control unit adjusts an operating condition (Claim 1). For example, it decreases the data input/output (I/O) speed from a first speed to a second, slower speed (Claim 1). If the temperature drops even further below a second, colder threshold, the data I/O speed can be decreased again (Claim 2). The system can also increase the read voltage level (Claim 4) or the drive strength (Claim 7) when temperatures fall, to ensure data is read correctly and reliably. Conversely, if the temperature rises back above a threshold, the system can revert these adjustments, increasing the data I/O speed or decreasing the read voltage/drive strength (Claim 3, 6, 9).
The clever bit
The clever bit is recognizing that *decreasing* temperatures also cause specific types of memory errors and proactively adjusting operating parameters like data speed, read voltage, or drive strength to compensate, rather than just focusing on overheating issues.
What it does not cover
- Does not cover memory systems that are not NAND flash memory.
- Does not cover adjusting memory operations when temperature *increases*, unless it's reverting a previous adjustment made for cold conditions.
- Does not cover adjusting operating conditions other than data I/O speed, read voltage level, or drive strength.
- Does not cover memory systems that *increase* data I/O speed when the temperature *decreases*.
- Does not cover systems that only adjust for *high* temperatures, such as reducing performance to prevent overheating.
Patent timeline
Application submitted to the patent office
Application published, typically 18 months after filing
Patent officially issued
Patent enters public domain
PatentBrief Score
Impact Score
Moderate
Citation count
16/40
Early citations
Claim breadth
13/20
Broad claimsclaimsThe numbered statements at the end of a patent that legally define what the inventor owns.Read more →
Recency
10/20
Granted 5–10 years ago
Assignee scale
20/20
Major company or institution
PatentBrief Impact Score — based on citation count, claim breadth, recency, and assignee scale. Not a legal assessment.
Heuristic Value Estimate
What this patent might be worth
$78K – $250K
Midpoint $156K · 9.5 yr remaining · industry ×1.6
Heuristic only — blends forward/backward citation counts, claim scope, time remaining, litigation history, and CPC-derived industry baseline. Real valuations need a professional appraisal.
Claim text not yet imported for this patent
The original legal language
Original claims
20 claims as filed with the patent office.
Concepts involved
Citations
Patent lineage
Cite this patent
SHIN, H., & Chung, W. (2018). How NAND Flash Memory Adjusts to Cold Temperatures (U.S. Patent No. 10,019,188). U.S. Patent and Trademark Office. https://patentbrief.org/patent/us/10019188/storage-devices-memory-systems-and-operating-methods-to-suppress-operating-error
Auto-generated from the patent record. Double-check author order and the issue date against the official USPTO document before submitting.
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Common Questions
Frequently Asked Questions
What does How NAND Flash Memory Adjusts to Cold Temperatures cover?
This patent describes a method for NAND flash memory systems to prevent errors by automatically adjusting their operating conditions, like data speed or voltage, when the temperature drops too low.
Who owns patent US 10019188?
Samsung Electronics Co owns this patent, granted in 2018.
When does this patent expire?
This patent is expected to expire on February 5, 2036, when the invention enters the public domain.
What is patent US 10019188 cited by?
This patent has been cited by 5 later patents that build on its ideas.
What problem does this patent solve?
NAND flash memory, used in many devices, is sensitive to temperature changes. Operating in very cold conditions can lead to data errors or system instability. This patent provides a mechanism to maintain data integrity and system reliability by dynamically adjusting how the memory operates, making flash storage more robust for use in a wider range of environments, from consumer gadgets to industrial equipment.
What does this patent NOT cover?
Does not cover memory systems that are not NAND flash memory.
Same assignee
More from Samsung Electronics Co
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