Systems and methods for monolithically integrated bypass switches in photovoltaic solar cells and modules
Structures and methods for a solar cell having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell and bypass switch comprising a semiconductor layer having background doping, …
Original patent title: “Systems and methods for monolithically integrated bypass switches in photovoltaic solar cells and modules”
Structures and methods for a solar cell having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell and bypass switch comprising a semiconductor layer having background doping, …. Granted to Solexel in 2015 with 39 claims and 3 forward citations, and it is expected to expire in 2033.
Coverage
What does this patent actually cover?
Structures and methods for a solar cell having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell and bypass switch comprising a semiconductor layer having background doping, a frontside, and a backside is provided. A patterned first level metal is positioned on the layer backside and an electrically insulating backplane is positioned on the first level metal. A trench isolation pattern partitions the semiconductor layer into a solar cell region and at least one monolithically integrated bypass switch region. A patterned second level metal is positioned on the electrically insulating backplane and which connects to the first level metal through the backplane to complete the electrical metallization of the monolithically integrated solar cell and bypass switch structure.
The gap
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Key facts
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Patent Abstract
Patent abstract
Structures and methods for a solar cell having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell and bypass switch comprising a semiconductor layer having background doping, a frontside, and a backside is provided. A patterned first level metal is positioned on the layer backside and an electrically insulating backplane is positioned on the first level metal. A trench isolation pattern partitions the semiconductor layer into a solar cell region and at least one monolithically integrated bypass switch region. A patterned second level metal is positioned on the electrically insulating backplane and which connects to the first level metal through the backplane to complete the electrical metallization of the monolithically integrated solar cell and bypass switch structure.
Patent timeline
Application submitted to the patent office
Application published, typically 18 months after filing
Patent officially issued
Patent enters public domain
PatentBrief Score
Impact Score
Early stage
Citation count
12/40
Early citations
Claim breadth
20/20
Very broad protection
Recency
5/20
Granted 10–20 years ago
Assignee scale
0/20
Independent or smaller assigneeassigneeThe entity that owns the patent — usually the inventor's employer or a company.Read more →
PatentBrief Impact Score — based on citation count, claim breadth, recency, and assignee scale. Not a legal assessment.
Heuristic Value Estimate
What this patent might be worth
$90K – $288K
Midpoint $180K · 7.1 yr remaining · industry ×1.5
Heuristic only — blends forward/backward citation counts, claim scope, time remaining, litigation history, and CPC-derived industry baseline. Real valuations need a professional appraisal.
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The original legal language
Original claims
39 claims as filed with the patent office.
Concepts involved
Citations
Patent lineage
Cite this patent
Moslehi, M. M. (2015). Systems and methods for monolithically integrated bypass switches in photovoltaic solar cells and modules (U.S. Patent No. 9,219,171). U.S. Patent and Trademark Office. https://patentbrief.org/patent/us/9219171/systems-and-methods-for-monolithically-integrated-bypass-switches-in-photovoltai
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Common Questions
Frequently Asked Questions
Who owns patent US 9219171?
Solexel owns this patent, granted in 2015.
When does this patent expire?
This patent is expected to expire on October 16, 2033, when the invention enters the public domain.
What is patent US 9219171 cited by?
This patent has been cited by 3 later patents that build on its ideas.
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