You can freely build on How Robert Noyce Invented the Modern Integrated Circuit
This patent expired in 1979. Every claim — 0 independent, 0 dependent — is now unenforceable. Anyone can use, reproduce, manufacture, sell, or offer for sale this technology without a license.
Original assignee
Fairchild Semiconductor Corp
Patent granted
1961
Expired
1979
Forward citations
165
What this patent covers
This patent describes the planar process, a method for creating integrated circuits by layering materials on a silicon wafer. Instead of using fragile wires to connect individual transistors, the invention uses a thin, evaporated metal film deposited directly onto the silicon surface. This creates a reliable, permanent electrical connection between components on the same chip. It effectively allowed engineers to mass-produce complex electronic circuits as a single, solid piece of material.
What is now free to use
All 0 claims of US 2981877 are in the public domain. Specifically:
The 0 dependent claims add narrowing limitations and are also free.
What is NOT covered
Patent expiry frees this specific invention. Separately-patented improvements made after expiry may still be protected.
Does not cover the invention of the transistor itself.
Does not cover non-planar methods of manufacturing semiconductors.
Does not cover the specific chemical doping recipes used to create the P-N junctions.
Does not cover discrete components that are not integrated onto a single substrate.
Who is building on this today
Every major semiconductor company today, including Intel, TSMC, and Samsung, relies on the fundamental principles established in this patent. Robert Noyce himself went on to co-found Intel, which scaled this technology into the global standard for computing.
Products built on expired version of this technology
Modern microprocessors like Intel Core series
Smartphone application processors
Memory chips in solid state drives
How to cite this patent in your documentation
Fairchild Semiconductor Corp. US Patent 2981877. Semiconductor device-and-lead structure. Granted 1961, expired 1979. Now in the public domain.
Note: This is a convenience citation. Consult a patent attorney for formal freedom-to-operate analysis.
PatentBrief is an educational resource and does not provide legal advice. Patent expiration information is derived from USPTO records and may not reflect continuation patents, divisional filings, or separately-patented improvements. For commercial use or production decisions, obtain a formal freedom-to-operate (FTO) opinion from a registered patent attorney.