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PatentBrief

Company Portfolio

Yangtze Memory Technologies Co

Patents indexed

2

Year range

2024 – 2025

semiconductorsconsumer_electronicstelecommunicationssoftwaredata_storage

Patent Activity by Year

2024
1
2025
1

Key Inventors

Kaijin Huang1Yanlan Liu1

All Patents

2

Career timeline

2 patents, 2024–2025

Dot size = forward citations

20242025

Hover or tap any dot to see the patent. Larger dots indicate more forward citations — a proxy for downstream influence.

US 12450117·2025

How a Special Memory Chip Helps Fix Broken 3D NAND Storage

This patent describes a special content addressable memory (CAM) system that quickly finds and reroutes around defective memory locations in 3D NAND storage using multiple processing units at once.

US 12142328·2024

How to Precisely Erase Data in 3D NAND Flash Memory

This patent describes a two-stage method for erasing data in 3D NAND memory, using a coarse erase followed by a fine-tuned erase based on multiple sub-verifications to ensure data is completely and efficiently removed.

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