You can freely build on How the First Infrared LED Was Invented
This patent expired in 1983. Every claim — 1 independent, 0 dependent — is now unenforceable. Anyone can use, reproduce, manufacture, sell, or offer for sale this technology without a license.
Original assignee
Texas Instruments Inc
Patent granted
1966
Expired
1983
Forward citations
54
What this patent covers
The device uses a gallium-arsenide crystal body with two distinct layers, a p-type and an n-type, which meet to form a p-n junction. When an electrical current is applied through the contacts, the junction emits infrared light. The patent specifically details a design with a large contact on one side and a specialized, multi-part contact on the other to efficiently manage current flow and light emission. This structure was the foundational blueprint for modern light-emitting diodes.
What is now free to use
All 1 claims of US 3293513 are in the public domain. Specifically:
Claim 1: A SEMICONDUCTOR DEVICE — 1 specific element
The 0 dependent claims add narrowing limitations and are also free.
What is NOT covered
Patent expiry frees this specific invention. Separately-patented improvements made after expiry may still be protected.
Does not cover visible light LEDs, as this specific design emits infrared radiation.
Does not cover LEDs made from materials other than gallium-arsenide.
Does not cover light-emitting devices that rely on non-semiconductor materials like filaments or gas discharge.
Who is building on this today
Companies like Cree, Nichia, and Lumileds have built upon the foundational physics of semiconductor light emission established by this Texas Instruments invention. The entire modern LED lighting and display industry traces its technical lineage back to this specific gallium-arsenide discovery.
Products built on expired version of this technology
Infrared remote controls
Fiber optic communication systems
Early optoisolators
Night vision illumination systems
How to cite this patent in your documentation
Texas Instruments Inc. US Patent 3293513. Semiconductor radiant diode. Granted 1966, expired 1983. Now in the public domain.
Note: This is a convenience citation. Consult a patent attorney for formal freedom-to-operate analysis.
PatentBrief is an educational resource and does not provide legal advice. Patent expiration information is derived from USPTO records and may not reflect continuation patents, divisional filings, or separately-patented improvements. For commercial use or production decisions, obtain a formal freedom-to-operate (FTO) opinion from a registered patent attorney.