How Robert Noyce Invented the Modern Integrated Circuit
Robert Noyce's 1959 patent for a semiconductor device that uses evaporated metal leads to connect components directly on a single silicon chip.
Patent Number
US 2981877
Status
Expired
Filing Date
July 30, 1959
Grant Date
April 25, 1961
Expiration
July 30, 1979
Claims
0
Assignee
Fairchild Semiconductor Corp
Inventors
Robert N Noyce
Citations
165 forward · 4 backward
What it covers
This patent describes the planar process, a method for creating integrated circuits by layering materials on a silicon wafer. Instead of using fragile wires to connect individual transistors, the invention uses a thin, evaporated metal film deposited directly onto the silicon surface. This creates a reliable, permanent electrical connection between components on the same chip. It effectively allowed engineers to mass-produce complex electronic circuits as a single, solid piece of material.
What it doesn't cover
- —Does not cover the invention of the transistor itself.
- —Does not cover non-planar methods of manufacturing semiconductors.
- —Does not cover the specific chemical doping recipes used to create the P-N junctions.
- —Does not cover discrete components that are not integrated onto a single substrate.
The clever bit
Noyce realized that by using a protective insulating layer of silicon oxide, he could 'print' the wiring directly onto the chip, solving the problem of how to connect tiny components without manual soldering.
Why it matters
This is the foundational patent for the modern computer age. By enabling the mass production of integrated circuits, it moved electronics from bulky, hand-wired assemblies to the compact, powerful chips that drive every smartphone, computer, and car today. It was the key innovation that allowed Fairchild Semiconductor to dominate the early silicon industry.
Real-world examples
- 1.Modern microprocessors like Intel Core series
- 2.Smartphone application processors
- 3.Memory chips in solid state drives
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