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US RE48965

How to Stop Transistors from Wearing Out in Radio Frequency Chips

A method for extending the lifespan of silicon-on-insulator transistors by using a special sink to drain away charge that causes gate oxide breakdown.

Statusactive

Granted2022

Expires2039

Claims110

Forward citations0

Prior art781

AssigneePSemi Corp

InventorsTae Youn Kim, Christopher N. Brindle +7

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