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US 9947413

How to Program 3D Layered Memory Chips More Precisely

This patent describes a method for precisely programming the control transistors and memory cells in advanced 3D non-volatile memory chips, ensuring reliable data storage in stacke…

Statusactive
Granted2018
Expires2036
Claims26
Forward citations0
Prior art3
AssigneeSeoul National University R&DB Foundation
InventorsDae Woong KWON, Byung Gook Park +2
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