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Technology Patents

MEMS Sensor Patents

Accelerometer, gyroscope, pressure, and microphone IP; STMicro, Bosch, and InvenSense patent landscape for MEMS and IoT startups.

FAQ

Who are the major MEMS sensor patent holders and what innovations do STMicro, Bosch, and InvenSense protect?

MEMS sensor patents cover capacitive accelerometer proof mass and suspension spring design innovations; Coriolis effect gyroscope drive-sense mode decoupling innovations; MEMS pressure sensor cavity and diaphragm innovations; MEMS microphone backplate port acoustic design innovations; and multi-axis monolithic IMU integration innovations — with IP held by major semiconductor companies, MEMS specialists, and IoT sensor startups: MAJOR MEMS SENSOR PATENT HOLDERS: STMICROELECTRONICS: 5,000+; specific MEMS innovations (specific specific LSM6DSO 6-DOF IMU: specific specific 3-axis accelerometer ±2/±4/±8/±16 g from specific specific 3-axis gyroscope ±125/±250/±500/±1000/±2000 dps from specific specific 0.07 mg/LSB 1/7.5 mdps/LSB resolution from specific specific output data rate 1.6-6,664 Hz from specific specific 1.71 V VDD from specific specific 0.55 mA ODR from specific specific noise floor 70 μg/√Hz accel 4 mdps/√Hz gyro from specific specific machine learning core finite state machine FSM from specific specific LPS22HH barometer 24-bit 0.005 hPa noise from specific specific LIS2MDL 3-axis magnetometer ±50 Gauss 1.5 mGauss rms); BOSCH SENSORTEC: 3,000+; specific MEMS innovations (specific specific BMI088: specific specific automotive-grade AEC-Q100 Grade 1 from specific specific 6-DOF ±3g ±2000 dps from specific specific accelerometer Allan deviation 0.2 μg from specific specific gyroscope ARW angular random walk 0.3°/√h from specific specific 4.5×4.5×0.95 mm LGA from specific specific OIS optical image stabilization gimbal camera stabilization from specific specific BMG250: specific specific MEMS gyroscope from specific specific drive-sense decoupled from specific specific Coriolis force mode from specific specific zero-rate level ZRL 2 dps from specific specific bias stability 0.5°/h Allan deviation); INVENSENSE TDK: 2,000+; specific IMU innovations (specific specific ICM-42688-P: specific specific 6-DOF ±16g ±2000 dps from specific specific 28 μA low-power LP mode from specific specific noise floor 70 μg/√Hz accel from specific specific gyro RMS noise 0.0028 dps/√Hz from specific specific SPI/I²C 1 MHz from specific specific Apple Watch AirPods gyroscope design win from specific specific PDMP digital motion processor); ANALOG DEVICES: 2,000+; MURATA: 2,000+; FREESCALE/NXP: 1,500+; SILICON SENSING: 500+.

What capacitive MEMS accelerometer and gyroscope innovations are patentable?

Capacitive comb-drive and parallel-plate MEMS accelerometer proof mass innovations for ultra-low noise floor and wide bandwidth; Coriolis-effect MEMS gyroscope drive-sense decoupling and quadrature error cancellation innovations; and MEMS resonator frequency stability innovations for low-drift high-performance inertial measurement represent three core MEMS inertial sensor patent domains: MEMS ACCELEROMETER PATENTS: ANALOG DEVICES; MIT; ENDEVCO; KISTLER; COLIBRYS; MEMSIC: specific accel innovations (specific specific capacitive differential MEMS accelerometer: specific specific proof mass 100-500 μg polysilicon from specific specific folded-flexure suspension spring from specific specific spring constant k = 24EI/L³ from specific specific resonant frequency f_n = √(k/m) 1-10 kHz from specific specific differential capacitor C_diff = ε₀A/d from specific specific sensitivity ΔC/g 0.1-5 pF/g from specific specific sigma-delta ADC conversion 14-24 bit from specific specific ADXL354: specific specific ±2g ±4g ±8g from specific specific noise floor 15 μg/√Hz from specific specific bandwidth DC-3,200 Hz from specific specific offset stability ±0.75 mg 0°C to 70°C from specific specific shock survival 10,000g 1 ms from specific specific MEMS SiN bulk acoustic resonator for ADXL from specific specific piezoresistive MEMS accel: specific specific boron-doped Si piezoresistor from specific specific TCR temperature coefficient resistance from specific specific Wheatstone bridge 4-arm from specific specific 30 μV/V/g sensitivity from specific specific Kistler quartz charge mode from specific specific piezoelectric ±500g high-g from specific specific hermetic package TO-8 vacuum); MEMS GYROSCOPE PATENTS: ANALOG DEVICES; MURATA; BOSCH; SILICON SENSING; QUALTRÉ: specific gyro innovations (specific specific tuning fork MEMS gyro: specific specific two proof masses antiphase drive from specific specific Coriolis: F_Coriolis = 2m·v×Ω from specific specific quadrature error suppression electrode from specific specific Q factor drive mode 50,000-100,000 from specific specific ZRL zero-rate level <10 dps from specific specific ARW 0.003°/√h rate-grade sensor from specific specific bias instability 0.1°/h navigation-grade from specific specific silicon wafer bulk DRIE etching from specific specific mode-matched CVG cylindrical vibratory gyro: specific specific 3D axisymmetric resonator from specific specific MHz drive ±0.01 ppm frequency split from specific specific HRG hemispherical resonator gyro: specific specific fused silica from specific specific quality factor 10-25 million from specific specific Inertial Measurement Corp from specific specific drift <0.0001°/h at specific specific <0.001°/√h ARW from specific specific ring laser gyro FOG fiber optic vs. MEMS), MEMS OSCILLATOR RESONATOR PATENTS: SITIME; DISCERA; RESONANT; PERICOM: specific oscillator innovations (specific specific MEMS CMOS oscillator: specific specific polysilicon or AlN resonator from specific specific f = 1-200 MHz from specific specific Q = 100,000-1,000,000 from specific specific temperature compensation DCC digitally controlled compensation from specific specific SiTime Elite Platform: specific specific ±0.05 ppm stability at 25°C from specific specific ±0.5 ppm -40 to +85°C from specific specific 45 ppb/°C TC from specific specific vs. quartz crystal ±1-5 ppm from specific specific 50× better jitter performance).

What MEMS pressure, microphone, and magnetic field sensor innovations are patentable?

Capacitive MEMS pressure sensor diaphragm and reference cavity innovations for barometric altitude sensing; MEMS microphone backplate perforation acoustic port and SNR optimization innovations; and anisotropic magnetoresistive AMR and Hall-effect MEMS magnetic field sensor innovations represent three additional MEMS sensor patent domains: MEMS PRESSURE PATENTS: INFINEON; STMicro; BOSCH; MEASUREIT; SENSATA: specific pressure innovations (specific specific capacitive MEMS barometer: specific specific silicon diaphragm 2-10 μm thickness from specific specific sealed reference cavity 10 mTorr from specific specific sense capacitance 1-5 pF from specific specific sensitivity 10-100 aF/Pa from specific specific absolute pressure 300-1,100 hPa from specific specific 14-bit resolution from specific specific 0.005 hPa RMS noise at 1 Hz BW from specific specific temperature compensation NTC 2-point calibration from specific specific hermetic WLCSP wafer level chip scale package from specific specific altitude resolution <10 cm from specific specific BMP581 Bosch: specific specific 24-bit 0.04 Pa RMS at 2 Hz from specific specific 1.5-3.6 V 3.2 μA 1 Hz from specific specific piezoresistive automotive MAP pressure: specific specific boron diffused Si from specific specific gel-filled Gel-Fil™ harsh environment from specific specific 0-6 bar absolute from specific specific ±0.5% accuracy from specific specific HELLA Sensata Freescale MPXHZ); MEMS MICROPHONE PATENTS: INFINEON XENSIV; KNOWLES; VESPER; AKUSTICA: specific microphone innovations (specific specific capacitive MEMS microphone: specific specific perforated backplate 50 μm hole 10 μm from specific specific air gap 1-3 μm from specific specific diaphragm Si or SiN 1 μm from specific specific acoustic sensitivity -42 dBFS at 94 dB SPL from specific specific SNR 65-70 dB(A) from specific specific THD <1% at 120 dB SPL from specific specific ASIC CMOS: specific specific gain stage chopper-stabilized from specific specific sigma-delta ADC 24-bit digital PDM output from specific specific Infineon IM69D130: specific specific SNR 69 dB(A) from specific specific AOP 130 dB SPL from specific specific SVVS 61 dB from specific specific Vesper VM3011 piezoelectric MEMS: specific specific AlN piezoelectric no DC bias from specific specific water-proof IP57 from specific specific −38 dBFS ±3 dB 20-20,000 Hz from specific specific Knowles SPH0645: specific specific I²S 24-bit 3.072 MHz from specific specific bottom-port vs. specific specific top-port orientation); MAGNETIC FIELD / HALL PATENTS: MELEXIS; NXP; INFINEON; TDK/EPCOS; ALLEGRO: specific magnetic innovations (specific specific Hall-effect MEMS: specific specific spinning current Hall plate from specific specific offset cancellation 4-phase from specific specific Hall voltage VH = IB/nt from specific specific sensitivity 50-100 V/AT from specific specific resolution 10 μT at specific specific 10 Hz BW from specific specific AMR anisotropic magnetoresistive: specific specific Ni₈₁Fe₁₉ permalloy 20 nm from specific specific 3% ΔR/R sensitivity from specific specific TMR tunnel magnetoresistance: specific specific CoFeB/MgO/CoFeB MTJ from specific specific 200-600% TMR ratio from specific specific 1 nT/√Hz noise floor at 1 kHz from specific specific Melexis MLX90393: specific specific 3-axis AMR 0.161 μT/LSB from specific specific SPI/I²C from specific specific angle sensing 0.05° resolution from specific specific motor commutation automotive).

What IP strategy should MEMS sensor and IoT inertial sensing startup founders use?

MEMS sensor startup IP strategy must navigate STMicro&apos;s 5,000+, Bosch&apos;s 3,000+, and Analog Devices&apos; 2,000+ dominant MEMS inertial sensor portfolios; understand that capacitive MEMS accelerometer and gyroscope basic architecture patents have largely expired (Texas Instruments, ADI foundational MEMS from 1990s-early 2000s); and identify genuine whitespace in novel resonator structures, ultra-low-noise sensing modes, harsh environment MEMS, and application-specific MEMS sensor fusion: MEMS SENSOR STARTUP IP STRATEGY: UNDERSTAND THE MEMS LANDSCAPE: STMICRO BOSCH ANALOG DEVICES HOLD DOMINANT COMMERCIAL MEMS IP — FOUNDATIONAL ARCHITECTURE PATENTS EXPIRED: STMicro (5,000+), Bosch (3,000+), and Analog Devices (2,000+) together hold an extremely broad MEMS inertial sensor portfolio covering capacitive proof mass accelerometer design, drive-sense mode gyroscope decoupling, quadrature error cancellation, wafer-level packaging WLP/WLCSP, and CMOS-MEMS co-integration — foundational capacitive MEMS accelerometer patents (ADI ADXL 1991, Bosch SMB380 2002) have mostly expired, but advanced performance innovations (ultra-low noise floor, mode-matching, navigation-grade) remain strongly protected; NOVEL RESONATOR STRUCTURES AND MODE MATCHING ARE HIGH-VALUE IP: Mode-matched MEMS gyroscope where drive and sense mode frequencies are equal (Δf < 0.1 Hz) dramatically improving ARW from 0.3°/√h to 0.01°/√h is a commercially important high-value IP target; hemispherical resonator gyro HRG fused silica at MEMS scale is an emerging high-value whitespace; novel resonator geometry (wine-glass, disk, toroidal) with demonstrated Q > 1,000,000 is highly patentable; MEMS MICROPHONE AND PRESSURE SENSOR PERFORMANCE IS LESS DOMINATED THAN IMU: MEMS microphone IP from Knowles and Infineon is important but less dominant than IMU IP — piezoelectric MEMS microphone (Vesper) represents a less encumbered alternative to capacitive, and novel SPL range, bandwidth, or packaging innovations are more accessible; WHEN TO PATENT IN MEMS SENSORS: NOVEL MEMS INERTIAL SENSOR WITH MEASURED NOISE FLOOR AND BIAS STABILITY ADVANTAGE: specific novel MEMS inertial sensor design (specific specific resonator geometry + specific specific sensing mode + specific specific CMOS readout circuit) with specific measured performance (specific specific noise floor μg/√Hz for accelerometer or °/√h ARW for gyroscope, specific specific bias instability °/h Allan deviation at specific specific integration time τ, specific specific linearity %FS at specific specific full-scale range, specific specific bandwidth Hz, specific specific power consumption μA at specific specific VDD and ODR, specific specific die size mm²) vs. specific specific STMicro LSM6DSO 70 μg/√Hz accel 4 mdps/√Hz gyro or specific specific Bosch BMI088 0.2 μg ARW 0.3°/√h baseline — noise floor and bias stability vs. best-in-class commercial sensor at same power and form factor is the key MEMS sensor IP differentiator; NOVEL MEMS PACKAGING WITH MEASURED HERMETICITY AND ENVIRONMENTAL PERFORMANCE: specific novel MEMS packaging approach (specific specific wafer bonding method + specific specific cavity vacuum level + specific specific getter material) with specific measured performance (specific specific package internal pressure Pa and leak rate He He cm³/s from specific specific aging loss over temperature cycling 1,000h vs. specific specific initial from specific specific shock and vibration mil-spec MIL-STD-810 or specific specific automotive AEC-Q100 Grade 0 qualification data) vs. specific specific WLCSP industry baseline — hermeticity and environmental qualification data anchoring a novel packaging innovation is especially valuable for automotive and aerospace MEMS IP; KEY FTO CHECKLIST: STMicro LSM6DSO 0.55 mA 0.07 mg/LSB 70 μg/√Hz 4 mdps/√Hz 1.6-6,664 Hz FSM ML core; Bosch BMI088 0.2 μg ARW 0.3°/√h AEC-Q100 OIS gimbal; InvenSense ICM-42688-P 28 μA ±16g ±2000 dps Apple Watch; ADI ADXL354 15 μg/√Hz DC-3,200 Hz ±0.75 mg stability; Murata SCC2000 navigation-grade 0.05°/h ARW; SiTime Elite ±0.05 ppm 50× vs. quartz; BMP581 24-bit 0.04 Pa 2 Hz 3.2 μA; Infineon IM69D130 69 dB(A) SNR 130 dB AOP; Vesper VM3011 AlN piezo IP57; TMR CoFeB/MgO/CoFeB 200-600% 1 nT/√Hz; Melexis MLX90393 3-axis AMR 0.161 μT/LSB 0.05° angle.

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