{
  "patent_number": "US RE49538",
  "country": "US",
  "title": "How Samsung Makes Better Transistor Gates Using Two-Layer Metal Stacks",
  "original_title": "USRE49538E1 - Semiconductor device and method of fabricating the same",
  "summary": "A design for a transistor gate electrode that uses a two-layer metal structure to improve electrical performance and reliability in modern microchips.",
  "what_it_does": "This patent describes a specific way to build the gate electrode of a transistor, which acts as the switch for electricity in a chip. It uses a two-part structure: a lower gate electrode that acts as a cradle, and an upper gate electrode made of a different, more conductive metal that sits inside it. The lower gate has sidewalls that get thinner toward the top, which helps the upper metal layer fit snugly. By using a lower-resistivity metal for the upper part, the design allows electricity to flow faster through the gate, which is critical for high-performance processors.",
  "what_it_does_not_cover": [
    "Does not cover gate structures that use a single, uniform metal layer throughout.",
    "Does not cover transistors where the upper gate electrode is wider than the lower gate electrode.",
    "Does not cover non-semiconductor electronic switches or mechanical relays.",
    "Does not cover specific chemical compositions of the substrate itself."
  ],
  "filed": "2020-10-14",
  "granted": "2023-05-30",
  "expires": null,
  "status": "active",
  "holder": "Samsung Electronics Co Ltd",
  "holder_url": "https://patentbrief.org/company/samsung-electronics-co-ltd",
  "inventors": [
    {
      "name": "Hye-Lan Lee",
      "url": "https://patentbrief.org/inventor/hye-lan-lee"
    },
    {
      "name": "Hoonjoo NA",
      "url": "https://patentbrief.org/inventor/hoonjoo-na"
    },
    {
      "name": "Yugyun Shin",
      "url": "https://patentbrief.org/inventor/yugyun-shin"
    },
    {
      "name": "Hyung-seok HONG",
      "url": "https://patentbrief.org/inventor/hyung-seok-hong"
    },
    {
      "name": "Sughun Hong",
      "url": "https://patentbrief.org/inventor/sughun-hong"
    },
    {
      "name": "Sangjin Hyun",
      "url": "https://patentbrief.org/inventor/sangjin-hyun"
    },
    {
      "name": "Hongbae PARK",
      "url": "https://patentbrief.org/inventor/hongbae-park"
    }
  ],
  "times_cited": 0,
  "tags": [
    "semiconductors",
    "mechanical"
  ],
  "abstract": "A method of fabricating a semiconductor device includes forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate; forming a first conductive layer filling the first and second openings; etching the first conductive layer such that a bottom surface of the first opening is exposed and a portion of the first conductive layer in the second opening remains; and forming a second conductive layer filling the first opening and a portion of the second opening.",
  "url": "https://patentbrief.org/patent/us/RE49538/instant-pot-multi-cooker",
  "markdown_url": "https://patentbrief.org/patent/us/RE49538/instant-pot-multi-cooker/md",
  "google_patents_url": "https://patents.google.com/patent/USRE49538",
  "relatedPatents": []
}