{
  "patent_number": "US 3102230",
  "country": "US",
  "title": "The Invention of the Modern Field-Effect Transistor",
  "original_title": "Electric field controlled semiconductor device",
  "summary": "This 1960 patent describes the fundamental structure of the MOSFET, the tiny electronic switch that powers every modern computer processor.",
  "what_it_does": "The patent describes a semiconductor device that uses an electric field to control the flow of current between two regions of the same conductivity type, separated by a region of the opposite type. By placing a dielectric (insulating) layer over the surface and applying a voltage, the device creates an electric field that modulates the conductivity of the channel between the two P-N junctions. This mechanism allows a small input voltage to act as a gate, effectively turning the flow of electrons on or off, which is the basic requirement for binary logic in digital circuits.",
  "what_it_does_not_cover": [
    "Does not cover bipolar junction transistors (BJTs) which rely on current injection rather than electric field control.",
    "Does not cover vacuum tubes or other non-semiconductor switching technologies.",
    "Does not cover specific manufacturing lithography techniques used to build these devices at scale."
  ],
  "filed": "1960-05-31",
  "granted": "1963-08-27",
  "expires": "1980-08-27",
  "status": "expired",
  "holder": "Bell Telephone Laboratories Inc",
  "holder_url": "https://patentbrief.org/company/bell-telephone-laboratories-inc",
  "inventors": [
    {
      "name": "Kahng Dawon",
      "url": "https://patentbrief.org/inventor/kahng-dawon"
    }
  ],
  "times_cited": 37,
  "tags": [
    "semiconductors",
    "consumer_electronics"
  ],
  "abstract": null,
  "url": "https://patentbrief.org/patent/us/3102230/mosfet-field-effect-transistor",
  "markdown_url": "https://patentbrief.org/patent/us/3102230/mosfet-field-effect-transistor/md",
  "google_patents_url": "https://patents.google.com/patent/US3102230",
  "relatedPatents": [
    {
      "patentNumber": "2569347",
      "countryCode": "US",
      "title": "The Invention of the Junction Transistor",
      "url": "https://patentbrief.org/patent/us/2569347/junction-transistor"
    },
    {
      "patentNumber": "2524035",
      "countryCode": "US",
      "title": "The Invention of the Transistor",
      "url": "https://patentbrief.org/patent/us/2524035/point-contact-transistor"
    },
    {
      "patentNumber": "3387286",
      "countryCode": "US",
      "title": "How Robert Dennard Invented the One-Transistor DRAM Memory Cell",
      "url": "https://patentbrief.org/patent/us/3387286/dram-memory-dennard"
    },
    {
      "patentNumber": "2981877",
      "countryCode": "US",
      "title": "How Robert Noyce Invented the Modern Integrated Circuit",
      "url": "https://patentbrief.org/patent/us/2981877/noyce-planar-integrated-circuit"
    },
    {
      "patentNumber": "4531203",
      "countryCode": "US",
      "title": "How Flash Memory Cells Use an Erase Gate to Clear Data",
      "url": "https://patentbrief.org/patent/us/4531203/nand-flash-memory"
    }
  ]
}