# How a Special Transistor Reduces Power Leaks in Circuits

> This patent describes a logic circuit that uses a unique transistor made with an oxide semiconductor to drastically cut down on wasted electricity, preventing errors in electronic devices.

- **Patent:** US 12740152
- **Original title:** Logic circuit and semiconductor device
- **Granted:** 2026
- **Status:** Active
- **Times cited:** 0
- **Field:** semiconductors, consumer_electronics, telecommunications, software

## What it does

This patent describes a logic circuit designed to prevent malfunctions by significantly reducing electrical leakage. It achieves this using a special transistor that incorporates an 'oxide semiconductor layer', which acts as the 'channel formation layer' where electricity flows. This specific transistor is engineered to have an 'off current'—the tiny amount of electricity that still flows when the transistor is supposed to be completely off—of 1×10 −13 A or less per micrometer of its width. The circuit takes in a first signal, a second signal, and a third signal (a clock signal) as inputs, and then outputs a fourth and a fifth signal whose voltage states are determined by these inputs, much like how a simple 'AND' gate might process inputs to produce an output.

## What it does NOT cover

- Does not cover logic circuits that use traditional silicon-based transistors for their channel formation layer.
- Does not cover transistors where the 'off current' is higher than 1×10 −13 A per micrometer of channel width.
- Does not cover logic circuits that do not employ an oxide semiconductor layer in their transistors.
- Does not cover logic circuits that do not process at least three input signals to produce two output signals.

## The clever bit

The clever part is specifying a transistor with an 'oxide semiconductor layer' that achieves an extremely low 'off current' of 1×10 −13 A or less. This level of leakage reduction is critical for preventing circuit malfunctions and improving energy efficiency in advanced logic circuits.

## Real-world examples

1. Energy-efficient microprocessors
2. Low-power memory chips
3. Battery-powered IoT devices
4. High-density integrated circuits

## Why it matters

Reducing leakage current in transistors is vital for modern electronics, as it directly impacts power consumption and the stability of complex circuits. As devices become smaller and more integrated, even tiny leakages can lead to significant power drain and operational errors. This technology could enable more energy-efficient processors and memory, extending battery life in portable devices and reducing heat generation in data centers. It aims to address a fundamental challenge in semiconductor design.

## Frequently asked questions

### What does How a Special Transistor Reduces Power Leaks in Circuits cover?

This patent describes a logic circuit that uses a unique transistor made with an oxide semiconductor to drastically cut down on wasted electricity, preventing errors in electronic devices.

### When does this patent expire?

This patent is expected to expire on September 15, 2046, when the invention enters the public domain.

### What problem does this patent solve?

Reducing leakage current in transistors is vital for modern electronics, as it directly impacts power consumption and the stability of complex circuits. As devices become smaller and more integrated, even tiny leakages can lead to significant power drain and operational errors. This technology could enable more energy-efficient processors and memory, extending battery life in portable devices and reducing heat generation in data centers. It aims to address a fundamental challenge in semiconductor design.

### What does this patent NOT cover?

Does not cover logic circuits that use traditional silicon-based transistors for their channel formation layer.

**Full plain-English explainer:** https://patentbrief.org/patent/us/12740152/logic-circuit-and-semiconductor-device

**Original patent:** https://patents.google.com/patent/US12740152

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_Source: PatentBrief — https://patentbrief.org. Patent facts are from public records; the plain-English explanation is PatentBrief's._