{
  "patent_number": "US 12740152",
  "country": "US",
  "title": "How a Special Transistor Reduces Power Leaks in Circuits",
  "original_title": "Logic circuit and semiconductor device",
  "summary": "This patent describes a logic circuit that uses a unique transistor made with an oxide semiconductor to drastically cut down on wasted electricity, preventing errors in electronic devices.",
  "what_it_does": "This patent describes a logic circuit designed to prevent malfunctions by significantly reducing electrical leakage. It achieves this using a special transistor that incorporates an 'oxide semiconductor layer', which acts as the 'channel formation layer' where electricity flows. This specific transistor is engineered to have an 'off current'—the tiny amount of electricity that still flows when the transistor is supposed to be completely off—of 1×10 −13 A or less per micrometer of its width. The circuit takes in a first signal, a second signal, and a third signal (a clock signal) as inputs, and then outputs a fourth and a fifth signal whose voltage states are determined by these inputs, much like how a simple 'AND' gate might process inputs to produce an output.",
  "what_it_does_not_cover": [
    "Does not cover logic circuits that use traditional silicon-based transistors for their channel formation layer.",
    "Does not cover transistors where the 'off current' is higher than 1×10 −13 A per micrometer of channel width.",
    "Does not cover logic circuits that do not employ an oxide semiconductor layer in their transistors.",
    "Does not cover logic circuits that do not process at least three input signals to produce two output signals."
  ],
  "filed": "2025-01-17",
  "granted": "2026-09-15",
  "expires": null,
  "status": "active",
  "holder": null,
  "holder_url": null,
  "inventors": [],
  "times_cited": 0,
  "tags": [
    "semiconductors",
    "consumer_electronics",
    "telecommunications",
    "software"
  ],
  "abstract": "To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10 −13  A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.",
  "url": "https://patentbrief.org/patent/us/12740152/logic-circuit-and-semiconductor-device",
  "markdown_url": "https://patentbrief.org/patent/us/12740152/logic-circuit-and-semiconductor-device/md",
  "google_patents_url": "https://patents.google.com/patent/US12740152",
  "relatedPatents": []
}