{
  "patent_number": "US 12310123",
  "country": "US",
  "title": "How TSMC Makes Advanced Silicon-Based Light Sensors",
  "original_title": "Light detecting device, optical device and method of manufacturing the same",
  "summary": "A manufacturing process for high-performance light sensors that use alternating doped regions within a silicon-on-insulator structure to improve detection efficiency.",
  "what_it_does": "This patent describes a method for building a light-detecting device, likely for silicon photonics applications. It starts with an insulating layer and a silicon layer, then creates a specialized light-detecting layer that sits partly inside the silicon. Within this detecting layer, the inventors place alternating regions of different electrical types (N-type and P-type doping). A key feature is how these doped regions are shaped; they extend laterally beyond the main detecting area to create specific contact points. This structure helps manage how light is captured and how electrical signals are extracted from the device.",
  "what_it_does_not_cover": [
    "Does not cover standard CMOS image sensors used in smartphone cameras.",
    "Does not cover light detectors that lack the specific alternating N-type and P-type doped region geometry.",
    "Does not cover devices built on bulk silicon substrates without the specified insulating layer.",
    "Does not cover light detection methods that rely solely on external photodiode attachments."
  ],
  "filed": "2022-05-20",
  "granted": "2025-05-20",
  "expires": null,
  "status": "active",
  "holder": "Taiwan Semiconductor Manufacturing Co TSMC Ltd",
  "holder_url": "https://patentbrief.org/company/taiwan-semiconductor-manufacturing-co-tsmc-ltd",
  "inventors": [
    {
      "name": "Lan-Chou Cho",
      "url": "https://patentbrief.org/inventor/lan-chou-cho"
    },
    {
      "name": "Chewn-Pu Jou",
      "url": "https://patentbrief.org/inventor/chewn-pu-jou"
    },
    {
      "name": "Weiwei SONG",
      "url": "https://patentbrief.org/inventor/weiwei-song"
    }
  ],
  "times_cited": 0,
  "tags": [
    "semiconductors",
    "telecommunications",
    "consumer_electronics"
  ],
  "abstract": "The present disclosure provides a light detecting device. The light detecting devices includes an insulating layer, a silicon layer, a light detecting layer, N first doped regions and M second doped regions. The silicon layer is disposed over the insulating layer. The light detecting layer is disposed over the silicon layer and extends within at least a portion of the silicon layer. The first doped regions have a first dopant type and are disposed within the light detecting layer. The second doped regions have a second dopant type and are disposed within the light detecting layer. The first doped regions and the second doped regions are alternatingly arranged. M and N are integers equal to or greater than 2.",
  "url": "https://patentbrief.org/patent/us/12310123/raptor-1",
  "markdown_url": "https://patentbrief.org/patent/us/12310123/raptor-1/md",
  "google_patents_url": "https://patents.google.com/patent/US12310123",
  "relatedPatents": []
}