{
  "patent_number": "US 10825684",
  "country": "US",
  "title": "Making Tiny Chip Patterns with Special Metal-Filled Ink",
  "original_title": "Material composition and methods thereof",
  "summary": "This patent describes a new light-sensitive material, called a resist, that uses special multi-metal complexes to create incredibly small patterns on computer chips using extreme ultraviolet light.",
  "what_it_does": "The patent outlines a method for creating microscopic patterns on a substrate, which is the base material for computer chips. First, a resist layer is formed over the substrate (Claim 1). This resist layer is unique because it contains 'metal-containing nanoparticles' that are specifically 'multi-metal complexes.' These complexes have an 'extreme ultraviolet (EUV) absorption element' (like antimony, Claim 5) and a 'bridging element' (like ruthenium, Claim 5) that connects different metal atoms. When EUV light hits the resist, a chemical change occurs: a 'first ligand' (a molecule attached to the metal complex) that couldn't connect with other complexes is replaced by a 'second ligand' that *can* participate in a 'cross-linking reaction' (Claim 1). This cross-linking process makes the exposed areas of the resist harder. Finally, a development process washes away the unexposed, softer parts, leaving behind a precise, patterned resist layer (Claim 1). For example, this process could be used to define the incredibly fine circuit lines for the transistors in a smartphone processor.",
  "what_it_does_not_cover": [
    "Resist materials that do not contain multi-metal complexes, as the claims specifically require a 'multi-metal complex' (Claim 1).",
    "Methods that use light sources other than extreme ultraviolet (EUV) for exposure, as the resist includes an 'EUV absorption element' (Claim 1).",
    "Resist materials where the metal atoms within the complex are not separated by at least one ligand (Claim 1 specifies 'each metal atom... separated... by at least one ligand').",
    "Processes where the exposure does not cause a ligand replacement that enables cross-linking (Claim 1 details 'first ligand... replaced by a second ligand... configured to participate in the cross-linking reaction').",
    "Resist materials that are chemically amplified resists (CARs), as the patent specifically mentions a 'non-chemically amplified resist (non-CAR) layer' in some embodiments (Claim 12)."
  ],
  "filed": "2017-01-06",
  "granted": "2020-11-03",
  "expires": "2037-01-06",
  "status": "active",
  "holder": "Taiwan Semiconductor Manufacturing Co TSMC",
  "holder_url": "https://patentbrief.org/company/taiwan-semiconductor-manufacturing-co-tsmc",
  "inventors": [
    {
      "name": "Ying-Chih Lin",
      "url": "https://patentbrief.org/inventor/ying-chih-lin"
    },
    {
      "name": "Pi-Yeh CHIA",
      "url": "https://patentbrief.org/inventor/pi-yeh-chia"
    },
    {
      "name": "Jeng-Horng Chen",
      "url": "https://patentbrief.org/inventor/jeng-horng-chen"
    },
    {
      "name": "Chi-Ren Chen",
      "url": "https://patentbrief.org/inventor/chi-ren-chen"
    },
    {
      "name": "Chien-Chih Chen",
      "url": "https://patentbrief.org/inventor/chien-chih-chen"
    },
    {
      "name": "Kuo-Chang Kau",
      "url": "https://patentbrief.org/inventor/kuo-chang-kau"
    },
    {
      "name": "Shu-Hao Chang",
      "url": "https://patentbrief.org/inventor/shu-hao-chang"
    }
  ],
  "times_cited": 0,
  "tags": [
    "semiconductors",
    "consumer_electronics",
    "telecommunications",
    "materials"
  ],
  "abstract": "Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.",
  "url": "https://patentbrief.org/patent/us/10825684/material-composition-and-methods-thereof",
  "markdown_url": "https://patentbrief.org/patent/us/10825684/material-composition-and-methods-thereof/md",
  "google_patents_url": "https://patents.google.com/patent/US10825684",
  "relatedPatents": [
    {
      "patentNumber": "10866511",
      "countryCode": "US",
      "title": "How to Clean Tiny Chip Patterns Using a Special Chemical Developer",
      "url": "https://patentbrief.org/patent/us/10866511/extreme-ultraviolet-photolithography-method-with-developer-composition"
    },
    {
      "patentNumber": "10281819",
      "countryCode": "US",
      "title": "Making Microchips with a Silicon-Containing Photoresist Layer",
      "url": "https://patentbrief.org/patent/us/10281819/silicon-containing-photoresist-for-lithography"
    },
    {
      "patentNumber": "10514610",
      "countryCode": "US",
      "title": "Making Tiny Chip Patterns Using Gas and Light",
      "url": "https://patentbrief.org/patent/us/10514610/lithography-patterning-with-a-gas-phase-resist"
    },
    {
      "patentNumber": "20250172879",
      "countryCode": "US",
      "title": "How to Clean Metal Off Wafers After EUV Chipmaking",
      "url": "https://patentbrief.org/patent/us/20250172879/metal-compound-removing-solvent-and-method-in-lithography"
    },
    {
      "patentNumber": "12740286",
      "countryCode": "US",
      "title": "How a Special Coating Stops Materials from Sticking",
      "url": "https://patentbrief.org/patent/us/12740286/nucleation-inhibiting-coating-containing-rare-earth-compounds-and-devices"
    }
  ]
}