# Yangtze Memory Technologies Co — Patents explained on PatentBrief

Yangtze Memory Technologies Co has 2 landmark patents explained in plain English on PatentBrief.

- [How a Special Memory Chip Helps Fix Broken 3D NAND Storage](https://patentbrief.org/patent/us/12450117/firmware-repair-for-three-dimensional-nand-memory) — granted 2025
  This patent describes a special content addressable memory (CAM) system that quickly finds and reroutes around defective memory locations in 3D NAND storage using multiple processing units at once.
- [How to Precisely Erase Data in 3D NAND Flash Memory](https://patentbrief.org/patent/us/12142328/erasing-and-erasing-verification-for-three-dimensional-nand-memory) — granted 2024
  This patent describes a two-stage method for erasing data in 3D NAND memory, using a coarse erase followed by a fine-tuned erase based on multiple sub-verifications to ensure data is completely and efficiently removed.

**Full profile:** https://patentbrief.org/company/yangtze-memory-technologies-co

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_Source: PatentBrief — https://patentbrief.org. Plain-English explanations of US patents._