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    <description>Plain-English explanations of patents assigned to Tokyo Shibaura Electric Co Ltd, newest first.</description>
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      <title>How Flash Memory Cells Use an Erase Gate to Clear Data</title>
      <link>https://patentbrief.org/patent/us/4531203/nand-flash-memory</link>
      <description>This 1985 patent describes the foundational structure of flash memory, introducing an &apos;erase gate&apos; that allows data to be electrically wiped from a memory cell.</description>
      <pubDate>Tue, 23 Jul 1985 00:00:00 GMT</pubDate>
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